Owner manual
Jul. 2005
MITSUBISHI HVIGBT MODULES
CM1200HC-66H
HIGH POWER SWITCHING USE
INSULATED TYPE
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
(
TYPICAL
)
COLLECTOR-EMITTER VOLTAGE
(
V
)
COLLECTOR CURRENT
(
A
)
TRANSFER CHARACTERISTICS
(
TYPICAL
)
GATE-EMITTER VOLTAGE
(
V
)
COLLECTOR CURRENT
(
A
)
COLLECTOR CURRENT
(
A
)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(
TYPICAL
)
EMITTER CURRENT
(
A
)
EMITTER-COLLECTOR VOLTAGE
(
V
)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(
TYPICAL
)
COLLECTOR-EMITTER SATURATION VOLTAGE
(
V
)
2000
2400
1600
1200
800
400
0
3421056
5
6
4
3
2
1
0
1200 16008004000
2000 2400
5
6
4
3
2
1
0
1200 16008004000 2000 2400
2000
2400
1600
1200
800
400
0
6 8420 10 12
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
V
GE
= 15V
V
CE
= 20V
T
j
= 125°C
V
GE
= 10V
V
GE
= 8V
V
GE
= 12V
V
GE
= 20V
V
GE
= 15V