Owner manual

Jul. 2005
MITSUBISHI HVIGBT MODULES
CM1200HC-66H
HIGH POWER SWITCHING USE
INSULATED TYPE
● IC ................................................................ 1200A
● V
CES ....................................................... 3300V
● Insulated Type
● 1-element in a Pack
● AISiC Baseplate
APPLICATION
Traction drives, High Reliability Converters / Inverters, DC choppers
CM1200HC-66H
OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm
CIRCUIT DIAGRAM
38
+1 0
28
+1 0
+0.1 –0.2
±0.2
±0.2
±0.2
±0.2
±0.3
±0.3
±0.3
±0.1
screwing depth
min. 16.5
screwing depth
min. 7.7
±0.3 ±0.3
E
C
E
E
C
C
E
G
C
LABEL
C
E
G
C
E
CM
EE
CC
29.5
5
13
61.5
61.5
140
124
±0.1
±0.5
±0.2
±0.15
±0.5
40
79.4
20.25
57
±0.1
5.2
40
15
41.25
57
±0.1
20
3 - M4 NUTS
8 - φ7 MOUNTING HOLES
6 - M8 NUTS
171
±0.1
190
±0.5
57±0.1
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules