User guide
Jul. 2005
MITSUBISHI HVIGBT MODULES
CM1200HC-50H
HIGH POWER SWITCHING USE
INSULATED TYPE
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
EMITTER-COLLECTOR VOLTAGE
(
V
)
REVERSE RECOVERY CURRENT
(
A
)
FREE-WHEEL DIODE REVERSE
RECOVERY SAFE OPERATING AREA
(
RRSOA
)
COLLECTOR-EMITTER VOLTAGE
(
V
)
COLLECTOR CURRENT
(
A
)
REVERSE BIAS SAFE OPERATING AREA
(
RBSOA
)
2500
3000
2000
1500
1000
500
0
1500 200010005000 2500 3000
2500
3000
2000
1500
1000
500
0
1500 200010005000 2500 3000
V
CC
≤ 1700V, di/dt
≤ 4000A/µs
T
j
= 125°C
V
CC
≤ 1700V, V
GE
= +/-15V
T
j
= 125°C, R
G(off)
≥ 1.6Ω