User guide

Jul. 2005
MITSUBISHI HVIGBT MODULES
CM1200HC-50H
HIGH POWER SWITCHING USE
INSULATED TYPE
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
10
2
10
3
10
1
10
0
10
0
10
-1
23 57
10
1
10
2
23 57 23 57
2
3
5
7
2
3
5
7
2
3
5
7
CAPACITANCE CHARACTERISTICS
(
TYPICAL
)
COLLECTOR-EMITTER VOLTAGE
(
V
)
CAPACITANCE
(
nF
)
GATE CHARGE CHARACTERISTICS
(
TYPICAL
)
GATE CHARGE
(
µC
)
GATE-EMITTER VOLTAGE
(
V
)
COLLECTOR CURRENT
(
A
)
SWITCHING ENERGIES
(
J/pulse
)
HALF-BRIDGE
SWITCHING ENERGY CHARACTERISTICS
(
TYPICAL
)
GATE RESISTANCE
(
Ω
)
SWITCHING ENERGIES
(
J/pulse
)
HALF-BRIDGE
SWITCHING ENERGY CHARACTERISTICS
(
TYPICAL
)
2.5
3
2
1.5
1
0.5
0
1200 16008004000 2000 2400
6
5
4
3
2
0
5 100 15 20
1
20
16
12
8
4
0
963012
Eon
Eoff
Erec
Eoff
Cies
Coes
Cres
VCC = 1250V, IC = 1200A
V
GE = ±15V
T
j = 125°C, Inductive load
VCC = 1250V, VGE = ±15V
R
G(on) = RG(off) = 1.6Ω
T
j = 125°C, Inductive load
Eon
VGE = 0V, Tj = 25°C
f = 100kHz
V
CC = 1250V, IC = 1200A
T
j = 25°C
Erec