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MITSUBISHI HVIGBT MODULES CM1200HC-50H 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE CM1200HC-50H ● IC ................................................................ 1200A ● VCES .......................................................
MITSUBISHI HVIGBT MODULES CM1200HC-50H 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE MAXIMUM RATINGS Symbol VCES VGES IC ICM IE (Note 2) IEM(Note 2) PC (Note 3) Tj Top Tstg Viso tpsc Item Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum power dissipation Junction temperature Operating temperature Storage temperature Isolation voltage Maximum short circuit pulse width Conditions VGE = 0V, Tj = 2
MITSUBISHI HVIGBT MODULES CM1200HC-50H 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE THERMAL CHARACTERISTICS Symbol Rth(j-c)Q Rth(j-c)R Rth(c-f) Item Thermal resistance Contact thermal resistance Conditions Junction to Case, IGBT part Junction to Case, FWDi part Case to Fin, λgrease = 1W/m·K Min — — — Limits Typ — — 6.0 Max 8.5 17.
MITSUBISHI HVIGBT MODULES CM1200HC-50H HIGH POWER SWITCHING USE INSULATED TYPE 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules PERFORMANCE CURVES TRANSFER CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) 2400 2400 VCE = 10V Tj = 25°C VGE = 12V 2000 2000 VGE = 10V VGE = 15V 1600 COLLECTOR CURRENT (A) COLLECTOR CURRENT (A) VGE = 20V 1200 800 400 1600 1200 800 400 VGE = 8V Tj = 25°C Tj = 125°C 0 1 2 3 4 5 0 6 0 2 4 6 8 10 COLLECTOR-EMIT
MITSUBISHI HVIGBT MODULES CM1200HC-50H HIGH POWER SWITCHING USE INSULATED TYPE 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules CAPACITANCE CHARACTERISTICS (TYPICAL) GATE CHARGE CHARACTERISTICS (TYPICAL) 103 20 VCC = 1250V, IC = 1200A Tj = 25°C VGE = 0V, Tj = 25°C f = 100kHz 7 5 3 CAPACITANCE (nF) GATE-EMITTER VOLTAGE (V) Cies 2 102 7 5 3 2 Coes 101 7 5 Cres 16 12 8 4 3 2 100 -1 10 5 7 101 3 6 9 12 GATE CHARGE (µC) HALF-BRIDGE SWITCHING ENERGY CHARACTER
MITSUBISHI HVIGBT MODULES CM1200HC-50H HIGH POWER SWITCHING USE INSULATED TYPE 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules FREE-WHEEL DIODE REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 102 7 5 102 VCC = 1250V, VGE = ±15V RG(on) = RG(off) = 1.
MITSUBISHI HVIGBT MODULES CM1200HC-50H 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules FREE-WHEEL DIODE REVERSE RECOVERY SAFE OPERATING AREA (RRSOA) REVERSE BIAS SAFE OPERATING AREA (RBSOA) 3000 3000 REVERSE RECOVERY CURRENT (A) VCC ≤ 1700V, VGE = +/-15V Tj = 125°C, RG(off) ≥ 1.
