User Manual

Mar. 2003
MITSUBISHI HVIGBT MODULES
CM1200HA-34H
HIGH POWER SWITCHING USE
INSULATED TYPE
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
PERFORMANCE CURVES
1600
2000
2400
800
400
0
100
2
468
1200
1600
2000
2400
800
400
0
1200
200481216
0
5
4
3
1
2
0 400 800 1200 1600 2000 2400 0 20161284
10
8
6
4
2
0
T j = 25°C
T j = 25°C
V GE = 13V
V GE = 11V
V GE = 12V
V
GE = 10V
V GE = 9V
V GE = 8V
V GE = 7V
V GE = 14V
V GE = 15V
V GE = 20V
I C = 2400A
I C = 1200A
I C = 480A
V CE = 10V
V GE = 15V
T j = 25°C
T
j = 125°C
T j = 25°C
T
j = 125°C
10
1
2310
–1
5710
0
23 5710
1
23 5710
2
10
3
7
5
3
2
10
2
7
5
3
2
7
5
3
2
10
0
C ies
C oes
C res
V GE = 0V, T j = 25°C
C
ies, C oes : f = 100kHz
C
res
: f = 1MHz
CAPACITANCE CHARACTERISTICS
(
TYPICAL
)
CAPACITANCE C
ies
, C
oes
, C
res
(
nF
)
COLLECTOR-EMITTER VOLTAGE V CE
(
V
)
OUTPUT CHARACTERISTICS
(
TYPICAL
)
COLLECTOR CURRENT I
C
(
A
)
TRANSFER CHARACTERISTICS
(
TYPICAL
)
COLLECTOR CURRENT I
C
(
A
)
GATE-EMITTER VOLTAGE V GE
(
V
)
COLLECTOR-EMITTER
SATURATION VOLTAGE V
CE(sat)
(
V
)
COLLECTOR CURRENT I C
(
A
)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(
TYPICAL
)
COLLECTOR-EMITTER VOLTAGE V
CE
(
V
)
COLLECTOR-EMITTER
SATURATION VOLTAGE V
CE(sat)
(
V
)
GATE-EMITTER VOLTAGE V GE
(
V
)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(
TYPICAL
)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(
TYPICAL
)
EMITTER-COLLECTOR VOLTAGE V
EC
(
V
)
EMITTER CURRENT I E
(
A
)
0 24001200 1600 2000800400
5
4
3
2
1
0
T j = 25°C
T
j = 125°C