User Manual

Mar. 2003
V
CE = VCES, VGE = 0V
V
GE = VGES, VCE = 0V
T
j = 25°C
T
j = 125°C
V
CC = 850V, IC = 1200A, VGE = 15V
V
CC = 850V, IC = 1200A
V
GE1 = VGE2 = 15V
R
G = 1.6Ω
Resistive load switching operation
I
E = 1200A, VGE = 0V
I
E = 1200A
die / dt = –2400A / µs
Junction to case, IGBT part
Junction to case, FWDi part
Case to fin, conductive grease applied
MITSUBISHI HVIGBT MODULES
CM1200HA-34H
HIGH POWER SWITCHING USE
INSULATED TYPE
HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)
MAXIMUM RATINGS (Tj = 25°C)
Collector-emitter voltage
Gate-emitter voltage
Maximum collector dissipation
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Mass
V
GE = 0V
V
CE = 0V
DC, T
C = 95°C
Pulse (Note 1)
Pulse (Note 1)
T
C = 25°C, IGBT part
—
—
Charged part to base plate, rms, sinusoidal, AC 60Hz 1min.
Main terminals screw M8
Mounting screw M6
Auxiliary terminals screw M4
Typical value
Collector current
Emitter current
1700
±20
1200
2400
1200
2400
13800
–40 ~ +150
–40 ~ +125
4000
6.67 ~ 13.00
2.84 ~ 6.00
0.88 ~ 2.00
1.5
Symbol Item Conditions UnitRatings
V
V
A
A
A
A
W
°C
°C
V
N·m
N·m
N·m
kg
V
CES
VGES
IC
ICM
IE (Note 2)
IEM (Note 2)
PC (Note 3)
Tj
Tstg
Viso
—
—
V
V
Min Typ Max
30
0.5
3.58
—
—
—
—
—
1.20
1.50
2.00
0.60
3.12
2.00
—
0.009
0.028
—
mA
µA
nF
nF
nF
µC
µs
µs
µs
µs
V
µs
µC
K/W
K/W
K/W
—
—
2.75
3.30
140
20.0
7.6
6.6
—
—
—
—
2.40
—
200
—
—
0.008
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
I
CES
IGES
Cies
Coes
Cres
QG
td (on)
tr
td (off)
tf
VEC (Note 2)
trr (Note 2)
Qrr (Note 2)
Rth(j-c)Q
Rth(j-c)R
Rth(c-f)
Symbol
Item Conditions
V
GE(th)
VCE(sat)
Limits
Unit
5.5
4.5
Note 1. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating.
2. I
E, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode.
3. Junction temperature (T
j) should not increase beyond 150°C.
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
6.5
Thermal resistance
ELECTRICAL CHARACTERISTICS (Tj = 25°C)
Collector cutoff current
Gate-emitter
threshold voltage
Gate-leakage current
Collector-emitter
saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Emitter-collector voltage
Reverse recovery time
Reverse recovery charge
Contact thermal resistance
I
C = 120mA, VCE = 10V
I
C = 1200A, VGE = 15V (Note 4)
V
CE = 10V
V
GE = 0V
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules