User Manual
CM100RX-24S
Six IGBTMOD™ + Brake NX-S Series Module
100 Amperes/1200 Volts
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
4 06/11 Rev. 2
Electrical Characteristics, T
j
= 25°C unless otherwise specied
Brake Part IGBT/FWDi
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Emitter Cutoff Current I
CES
V
CE
= V
CES
, V
GE
= 0V — — 1 mA
Gate-Emitter Leakage Current I
GES
V
GE
= V
GES
, V
CE
= 0V — — 0.5 µA
Gate-Emitter Threshold Voltage V
GE(th)
I
C
= 5mA, V
CE
= 10V 5.4 6 6.6 Volts
Collector-Emitter Saturation Voltage V
CE(sat)
I
C
= 50A, V
GE
= 15V, T
j
= 25°C
*5
— 1.80 2.25 Volts
(Terminal) I
C
= 50A, V
GE
= 15V, T
j
= 125°C
*5
— 2.00 — Volts
I
C
= 50A, V
GE
= 15V, T
j
= 150°C
*5
— 2.05 — Volts
Collector-Emitter Saturation Voltage V
CE(sat)
I
C
= 50A, V
GE
= 15V, T
j
= 25°C
*5
— 1.70 2.15 Volts
(Chip) I
C
= 50A, V
GE
= 15V, T
j
= 125°C
*5
— 1.90 — Volts
I
C
= 50A, V
GE
= 15V, T
j
= 150°C
*5
— 1.95 — Volts
Input Capacitance C
ies
— — 5.0 nF
Output Capacitance C
oes
V
CE
= 10V, V
GE
= 0V — — 1.0 nF
Reverse Transfer Capacitance C
res
— — 0.08 nF
Gate Charge Q
G
V
CC
= 600V, I
C
= 50A, V
GE
= 15V — 117 — nC
Turn-on Delay Time t
d(on)
— — 300 ns
Rise Time t
r
V
CC
= 600V, I
C
= 50A, V
GE
= ±15V, — — 200 ns
Turn-off Delay Time t
d(off)
R
G
= 13Ω, Inductive Load — — 600 ns
Fall Time t
f
— — 300 ns
Repetitive Peak Reverse Current I
RRM
V
R
= V
RRM
, V
GE
= 0V — — 1 mA
Forward Voltage V
F
I
F
= 50A, V
GE
= 0V, T
j
= 25°C
*5
— 1.80 2.25 Volts
(Terminal) I
F
= 50A, V
GE
= 0V, T
j
= 125°C
*5
— 1.80 — Volts
I
F
= 50A, V
GE
= 0V, T
j
= 150°C
*5
— 1.80 — Volts
Forward Voltage V
F
I
F
= 50A, V
GE
= 0V, T
j
= 25°C
*5
— 1.70 2.15 Volts
(Chip) I
F
= 50A, V
GE
= 0V, T
j
= 125°C
*5
— 1.70 — Volts
I
F
= 50A, V
GE
= 0V, T
j
= 150°C
*5
— 1.70 — Volts
Reverse Recovery Time t
rr
V
CC
= 600V, I
F
= 50A, V
GE
= ±15V, — — 300 ns
Reverse Recovery Charge Q
rr
R
G
= 13Ω, Inductive Load — 2.7 — µC
Turn-on Switching Energy per Pulse E
on
V
CC
= 600V, I
C
= I
E
= 50A, V
GE
= ±15V — 5.5 — mJ
Turn-off Switching Energy per Pulse E
off
R
G
= 13Ω, T
j
= 150°C, — 5.3 — mJ
Reverse Recovery Energy per Pulse E
rr
Inductive Load — 4.5 — mJ
Internal Gate Resistance r
g
— 0 — Ω
*5 Pulse width and repetition rate should be such as to cause negligible temperature rise.