Manual

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Document Number: 94392
6 Revision: 30-Apr-08
80RIA...PbF/81RIA...PbF Series
Vishay High Power Products
Phase Control Thyristors
(Stud Version), 80 A
Fig. 9 - Gate Characteristics
ORDERING INFORMATION TABLE
0.1
1
10
100
0.001 0.01 0.1 1 10 100 1000
VGD
IGD
(b)
(a)
Tj=25 °C
Tj=125 °C
Tj=-40 °C
(1) (2)
(3)
Instantaneous Gate Current (A)
Instantaneous Gate Voltage (V)
Rectangular gate pulse
a) Recommended load line for
b) Recommended load line for
Frequency Limited by PG(AV)
tr<=1 µs
rated di/dt : 20V, 30ohms; tr<=0.5 µs
<=30% rated di/dt : 20V, 65ohms
(1) PGM = 100W, tp = 500µs
(2) PGM = 50W, tp = 1ms
(3) PGM = 20W, tp = 2.5ms
(4) PGM = 10W, tp = 5ms
Device: 80RIA Series
(4)
1 -I
TAV
x 10 A
2 - 0 = Eyelet terminals (gate and auxiliary cathode leads)
3 - RIA = Essential part number
4
6
- Lead (Pb)-free
1 = Fast-on terminals (gate and auxiliary cathode leads)
- Voltage code x 100 = V
RRM
(see Voltage Ratings table)
5
-
None = Stud base 1/2"-20UNF- 2 A threads
M = Stud base metric threads M12 x 1.75 E 6
Device code
51324
6
8 0 RIA 120 M PbF
LINKS TO RELATED DOCUMENTS
Dimensions http://www.vishay.com/doc?95003