User Manual

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Document Number: 94347
2 Revision: 06-Jun-08
80EPS..PbF High Voltage Series
Vishay High Power Products
Input Rectifier Diode, 80 A
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop V
FM
80 A, T
J
= 25 °C 1.17 V
Forward slope resistance r
t
T
J
= 150 °C
3.17 mΩ
Threshold voltage V
F(TO)
0.73 V
Maximum reverse leakage current I
RM
T
J
= 25 °C
V
R
= Rated V
RRM
0.1
mA
T
J
= 150 °C 1.0
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range
T
J
, T
Stg
- 40 to 150 °C
Maximum thermal resistance,
junction to case
R
thJC
DC operation 0.35
°C/W
Maximum thermal resistance,
junction to ambient
R
thJA
40
Typical thermal resistance,
case to heatsink
R
thCS
Mounting surface, flat, smooth and greased 0.2
Approximate weight
6g
0.21 oz.
Mounting torque
minimum 6 (5)
kgf · cm
(lbf · in)
maximum 12 (10)
Marking device Case style TO-247AC (JEDEC)
80EPS08
80EPS12