Owner manual

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Document Number: 94469
4 Revision: 06-May-08
70MT060WHTAPbF
Vishay High Power Products
"Half-Bridge" IGBT MTP
(Warp2 Speed IGBT), 70 A
Fig. 1 - Typical Output Characteristics
Fig. 2 - Maximum Collector Current vs.
Case Temperature
Fig. 3 - Typical Collector to Emitter Voltage vs.
Junction Temperature
Fig. 4 - Typical Gate Charge vs.
Gate to Emitter Votlage
Fig. 5 - Maximum Forward Voltage Drop vs.
Instantaneous Forward Current
Fig. 6 - Typical Zero Gate Voltage Collector Current
1
100
10
1000
I
C
- Collector to Emitter Current (A)
V
CE
- Collector to Emitter Voltage (V)
1.0 2.0 3.0 4.0
5.0
0.0
T
J
= 25 °C
T
J
= 150 °C
V
GE
= 15 V
100
120
140
160
80
60
40
20
0
Allowable Case Temperature (°C)
Maximum DC Collector Current (A)
20 40 60 80 100
120
0
DC
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
V
CE
- Collector to Emitter
Voltage (V)
T
J
- Junction Temperature (°C)
20 40 60 80 120100 140
160
I
c
= 70 A
I
c
= 140 A
I
c
= 30 A
0
2
4
8
6
10
12
14
16
V
GE
- Gate to Emitter Voltage (V)
O
G
- Total Gate Charge (nC)
200 400 600 800 10000
V
cc
= 480 V
1
100
10
1000
I
F
- Instantaneous
Forward Current (A)
V
FM
- Forward Voltage Drop (V)
0.5 1.0 1.5 2.0 2.5 3.0
3.5
0.0
T
J
= 25 °C
T
J
= 150 °C
0.0001
0.001
0.01
I
CES
- Collector to Emitter
Current (mA)
V
CES
- Collector to Emitter Voltage (V)
300 400 500
600
200
0.1
1.0
10
150 °C
25 °C