User Manual

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Document Number: 93519
2 Revision: 29-Sep-08
6F(R) Series
Vishay High Power Products
Standard Recovery Diodes
(Stud Version), 6 A
Note
(1)
Available only for avalanche version, all other parameters the same as 6F
FORWARD CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
at case temperature
I
F(AV)
180° conduction, half sine wave
6A
160 °C
Maximum RMS forward current I
F(RMS)
9.5 A
Maximum non-repetitive peak reverse power P
R
(1)
10 µs square pulse, T
J
= T
J
maximum 4 K/W
Maximum peak, one cycle forward,
non-repetitive surge current
I
FSM
t = 10 ms
No voltage
reapplied
Sinusoidal half wave,
initial T
J
=
T
J
maximum
159
A
t = 8.3 ms 167
t = 10 ms
100 % V
RRM
reapplied
134
t = 8.3 ms 141
Maximum I
2
t for fusing I
2
t
t = 10 ms
No voltage
reapplied
127
A
2
s
t = 8.3 ms 116
t = 10 ms
100 % V
RRM
reapplied
90
t = 8.3 ms 82
Maximum I
2
√t for fusing I
2
√t t = 0.1 to 10 ms, no voltage reapplied 1270 A
2
√s
Low level value of threshold voltage V
F(TO)1
(16.7 % x π x I
F(AV)
< I < π x I
F(AV)
), T
J
= T
J
maximum 0.63
V
High level value of threshold voltage V
F(TO)2
(I > π x I
F(AV)
), T
J
= T
J
maximum 0.86
Low level value of forward slope resistance r
f1
(16.7 % x π x I
F(AV)
< I < π x I
F(AV)
), T
J
= T
J
maximum 15.7
mΩ
High level value of forward slope resistance r
f2
(I > π x I
F(AV)
), T
J
= T
J
maximum 5.6
Maximum forward voltage drop V
FM
I
pk
= 19 A, T
J
= 25 °C, t
p
= 400 µs rectangular wave 1.10 V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction
temperature range
T
J
- 65 to 175
°C
Maximum storage
temperature range
T
Stg
- 65 to 200
Maximum thermal resistance,
junction to case
R
thJC
DC operation 2.5
K/W
Maximum thermal resistance,
case to heatsink
R
thCS
Mounting surface, smooth, flat and greased 0.5
Mounting torque, ± 10 %
Lubricated threads
(Not lubricated threads)
1.2
(1.5)
N · m
(lbf · in)
Approximate weight
7g
0.25 oz.
Case style See dimensions - link at the end of datasheet DO-203AA (DO-4)