Owner manual

www.vishay.com For technical questions, contact: indmodules@vishay.com
Document Number: 94507
4 Revision: 01-Mar-10
40MT120UHAPbF, 40MT120UHTAPbF
Vishay High Power Products
"Half Bridge" IGBT MTP
(Ultrafast NPT IGBT), 80 A
Fig. 1 - Maximum DC Collector Current vs. Case Temperature
Fig. 2 - Power Dissipation vs. Case Temperature
Fig. 3 - Forward SOA
T
C
= 25 °C; T
J
150 °C
Fig. 4 - Reverse BIAS SOA
T
J
= 150 °C; V
GE
= 15 V
Fig. 5 - Typical IGBT Output Characteristics
T
J
= - 40 °C; t
p
= 80 μs
Fig. 6 - Typical IGBT Output Characteristics
T
J
= 25 °C; t
p
= 80 μs
0 20406080100120140160
T
C
(°C)
0
20
40
60
80
100
I
C
(
A
)
0 20406080100120140160
T
C
(°C)
0
100
200
300
400
500
600
P
D
(
W
)
1 10 100 1000 10000
V
CE
(V)
0.01
0.1
1
10
100
1000
I
C
(
A
)
10 μs
100 μs
10ms
DC
10 100 1000 10 000
V
CE
(V)
1
10
100
1000
I
C
(
A
)
0246810
V
CE
(V)
0
20
40
60
80
100
120
140
160
I
C
E
(
A
)
V
GE
= 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
0246810
V
CE
(V)
0
20
40
60
80
100
120
140
160
I
C
E
(
A
)
V
GE
= 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V