Owner manual

Document Number: 94507 For technical questions, contact: indmodules@vishay.com
www.vishay.com
Revision: 01-Mar-10 1
"Half Bridge" IGBT MTP (Ultrafast NPT IGBT), 80 A
40MT120UHAPbF, 40MT120UHTAPbF
Vishay High Power Products
FEATURES
Ultrafast Non Punch Through (NPT) technology
•Positive V
CE(on)
temperature coefficient
10 μs short circuit capability
Square RBSOA
•HEXFRED
®
antiparallel diodes with ultrasoft reverse
recovery and low V
F
•Al
2
O
3
DBC
Optional SMD thermistor (NTC)
Very low stray inductance design for high speed operation
UL approved file E78996
Speed 8 kHz to 60 kHz
Compliant to RoHS directive 2002/95/EC
Designed and qualified for industrial level
BENEFITS
Optimized for welding, UPS and SMPS applications
Rugged with ultrafast performance
Benchmark efficiency above 20 kHz
Outstanding ZVS and hard switching operation
Low EMI, requires less snubbing
Excellent current sharing in parallel operation
Direct mounting to heatsink
PCB solderable terminals
Very low junction to case thermal resistance
PRODUCT SUMMARY
V
CES
1200 V
V
CE(on)
typical at V
GE
= 15 V 3.36 V
I
C
at T
C
= 25 °C 80 A
MTP
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Collector to emitter breakdown voltage V
CES
1200 V
Continuous collector current I
C
T
C
= 25 °C 80
A
T
C
= 104 °C 40
Pulsed collector current I
CM
160
Clamped inductive load current I
LM
160
Diode continuous forward current I
F
T
C
= 105 °C 21
Diode maximum forward current I
FM
160
Gate to emitter voltage V
GE
± 20
V
RMS isolation voltage V
ISOL
Any terminal to case, t = 1 min 2500
Maximum power dissipation (only IGBT) P
D
T
C
= 25 °C 463
W
T
C
= 100 °C 185
* Pb containing terminations are not RoHS compliant, exemptions may apply