Owner manual

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Document Number: 94507
2 Revision: 01-Mar-10
40MT120UHAPbF, 40MT120UHTAPbF
Vishay High Power Products
"Half Bridge" IGBT MTP
(Ultrafast NPT IGBT), 80 A
ELECTRICAL SPECIFICATIONS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Collector to emitter
breakdown voltage
V
(BR)CES
V
GE
= 0 V, I
C
= 250 μA 1200 - - V
Temperature coefficient of
breakdown voltage
ΔV
(BR)CES
/ΔT
J
V
GE
= 0 V, I
C
= 3 mA (25 °C to 125 °C) - + 1.1 - V/°C
Collector to emitter saturation voltage V
CE(on)
V
GE
= 15 V, I
C
= 40 A - 3.36 3.59
V
V
GE
= 15 V, I
C
= 80 A - 4.53 4.91
V
GE
= 15 V, I
C
= 40 A, T
J
= 150 °C - 3.88 4.10
V
GE
= 15 V, I
C
= 80 A, T
J
= 150 °C - 5.35 5.68
Gate threshold voltage V
GE(th)
V
CE
= V
GE
, I
C
= 500 μA 4 - 6
Temperature coefficient of
threshold voltage
V
GE(th)
/ΔT
J
V
CE
= V
GE
, I
C
= 1 mA (25 °C to 125 °C) - - 12 - mV/°C
Transconductance g
fe
V
CE
= 50 V, I
C
= 40 A, PW = 80 μs - 35 - S
Zero gate voltage collector current I
CES
V
GE
= 0 V, V
CE
= 1200 V, T
J
= 25 °C - - 250 μA
V
GE
= 0 V, V
CE
= 1200 V, T
J
= 125 °C - 0.4 1.0
mA
V
GE
= 0 V, V
CE
= 1200 V, T
J
= 150 °C - 0.2 10
Gate to emitter leakage current I
GES
V
GE
= ± 20 V - - ± 250 nA
SWITCHING CHARACTERISTICS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Total gate charge (turn-on) Q
g
I
C
= 40 A
V
CC
= 600 V
V
GE
= 15 V
- 399 599
nCGate to emitter charge (turn-on) Q
ge
-4365
Gate to collector charge (turn-on) Q
gc
- 187 281
Turn-on switching loss E
on
V
CC
= 600 V, I
C
= 40 A, V
GE
= 15 V,
R
g
= 5 Ω, L = 200 μH, T
J
= 25 °C,
energy losses include tail and diode
reverse recovery
- 1.14 1.71
mJ
Turn-off switching loss E
off
- 1.35 2.02
Total switching loss E
tot
- 2.49 3.73
Turn-on switching loss E
on
V
CC
= 600 V, I
C
= 40 A, V
GE
= 15 V,
R
g
= 5 Ω, L = 200 μH, T
J
= 125 °C,
energy losses include tail and diode
reverse recovery
- 1.60 2.40
Turn-off switching loss E
off
- 1.62 2.43
Total switching loss E
tot
- 3.22 4.82
Input capacitance C
ies
V
GE
= 0 V
V
CC
= 30 V
f = 1.0 MHz
- 5521 8282
pFOutput capacitance C
oes
- 380 570
Reverse transfer capacitance C
res
- 171 257
Reverse bias safe operating area RBSOA
T
J
= 150 °C, I
C
= 160 A
V
CC
= 1000 V, V
p
= 1200 V
R
g
= 5 Ω, V
GE
= + 15 V to 0 V
Fullsquare
Short circuit safe operating area SCSOA
T
J
= 150 °C,
V
CC
= 900 V, V
p
= 1200 V
R
g
= 5 Ω, V
GE
= + 15 V to 0 V
10 - - μs