Owner manual

Document Number: 94507 For technical questions, contact: [e-mail]
www.vishay.com
Revision: 01-Mar-10 1
"Half Bridge" IGBT MTP (Ultrafast NPT IGBT), 80 A
40MT120UHAPbF, 40MT120UHTAPbF
Vishay High Power Products
FEATURES
• Ultrafast Non Punch Through (NPT) technology
•Positive V
CE(on)
temperature coefficient
• 10 μs short circuit capability
• Square RBSOA
•HEXFRED
®
antiparallel diodes with ultrasoft reverse
recovery and low V
F
•Al
2
O
3
DBC
• Optional SMD thermistor (NTC)
• Very low stray inductance design for high speed operation
• UL approved file E78996
• Speed 8 kHz to 60 kHz
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
BENEFITS
• Optimized for welding, UPS and SMPS applications
• Rugged with ultrafast performance
• Benchmark efficiency above 20 kHz
• Outstanding ZVS and hard switching operation
• Low EMI, requires less snubbing
• Excellent current sharing in parallel operation
• Direct mounting to heatsink
• PCB solderable terminals
• Very low junction to case thermal resistance
PRODUCT SUMMARY
V
CES
1200 V
V
CE(on)
typical at V
GE
= 15 V 3.36 V
I
C
at T
C
= 25 °C 80 A
MTP
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Collector to emitter breakdown voltage V
CES
1200 V
Continuous collector current I
C
T
C
= 25 °C 80
A
T
C
= 104 °C 40
Pulsed collector current I
CM
160
Clamped inductive load current I
LM
160
Diode continuous forward current I
F
T
C
= 105 °C 21
Diode maximum forward current I
FM
160
Gate to emitter voltage V
GE
± 20
V
RMS isolation voltage V
ISOL
Any terminal to case, t = 1 min 2500
Maximum power dissipation (only IGBT) P
D
T
C
= 25 °C 463
W
T
C
= 100 °C 185
* Pb containing terminations are not RoHS compliant, exemptions may apply