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40MT120UHAPbF, 40MT120UHTAPbF Vishay High Power Products "Half Bridge" IGBT MTP (Ultrafast NPT IGBT), 80 A FEATURES • Ultrafast Non Punch Through (NPT) technology • Positive VCE(on) temperature coefficient • 10 μs short circuit capability • Square RBSOA • HEXFRED® antiparallel diodes with ultrasoft reverse recovery and low VF • Al2O3 DBC • Optional SMD thermistor (NTC) • Very low stray inductance design for high speed operation MTP • UL approved file E78996 • Speed 8 kHz to 60 kHz • Compliant to RoHS dir
40MT120UHAPbF, 40MT120UHTAPbF Vishay High Power Products "Half Bridge" IGBT MTP (Ultrafast NPT IGBT), 80 A ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Collector to emitter breakdown voltage Temperature coefficient of breakdown voltage Collector to emitter saturation voltage Gate threshold voltage Temperature coefficient of threshold voltage Transconductance Zero gate voltage collector current Gate to emitter leakage current SYMBOL V(BR)CES ΔV(BR)CES/ΔTJ VCE(on) VGE(th)
0MT120UHAPbF, 40MT120UHTAPbF "Half Bridge" IGBT MTP Vishay High Power Products (Ultrafast NPT IGBT), 80 A DIODE SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS IC = 40 A Diode forward voltage drop VFM Reverse recovery energy of the diode Erec Diode reverse recovery time trr Peak reverse recovery current Irr MIN. TYP. MAX. - 2.98 3.38 UNITS IC = 80 A - 3.90 4.41 IC = 40 A, TJ = 125 °C - 3.08 3.39 IC = 80 A, TJ = 125 °C - 4.29 4.
40MT120UHAPbF, 40MT120UHTAPbF Vishay High Power Products "Half Bridge" IGBT MTP (Ultrafast NPT IGBT), 80 A 100 1000 80 100 IC (A) IC (A) 60 40 10 20 1 0 0 20 40 60 80 10 100 120 140 160 100 1000 10 000 VCE (V) T C (°C) Fig. 1 - Maximum DC Collector Current vs. Case Temperature 600 Fig. 4 - Reverse BIAS SOA TJ = 150 °C; VGE = 15 V 160 VGE = 18V 140 500 VGE = 15V VGE = 12V VGE = 10V VGE = 8.
40MT120UHAPbF, 40MT120UHTAPbF "Half Bridge" IGBT MTP Vishay High Power Products (Ultrafast NPT IGBT), 80 A 20 160 VGE = 18V 140 120 16 ICE = 20A 14 V CE (V) 100 ICE (A) ICE = 80A ICE = 40A 18 VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 80 60 12 10 8 6 40 4 20 2 0 0 0 2 4 6 8 10 5 15 20 V GE (V) Fig. 7 - Typical IGBT Output Characteristics TJ = 125 °C; tp = 80 μs Fig. 10 - Typical VCE vs.
40MT120UHAPbF, 40MT120UHTAPbF Vishay High Power Products "Half Bridge" IGBT MTP (Ultrafast NPT IGBT), 80 A 4800 10 000 4200 Swiching Time (ns) Energy (μJ) 3600 3000 2400 1800 EON 1200 600 tdOFF 1000 tdON tR tF 100 EOFF 0 10 0 20 40 60 80 0 100 10 20 30 40 50 60 IC (A) Rg (Ω) Fig. 13 - Typical Energy Loss vs. IC TJ = 125 °C; L = 250 μH; VCE = 400 V Rg = 5 Ω; VGE = 15 V Fig. 16 - Typical Switching Time vs.
40MT120UHAPbF, 40MT120UHTAPbF "Half Bridge" IGBT MTP Vishay High Power Products (Ultrafast NPT IGBT), 80 A 50 10000 45 Cies Capacitance (pF) 40 Irr (A) 35 30 25 1000 Coes 100 Cres 20 15 10 10 0 200 400 600 800 0 1000 20 40 Fig. 19 - Typical Diode Irr vs. dIF/dt VCC = 600 V; VGE = 15 V; ICE = 40 A; TJ = 125 °C 80 100 Fig. 21 - Typical Capacitance vs. VCE VGE = 0 V; f = 1 MHz 5.0 16 60A 4.5 14 600V 40A 4.0 12 3.5 10 3.0 2.5 50 Ω 20A 30 Ω 2.
40MT120UHAPbF, 40MT120UHTAPbF Vishay High Power Products "Half Bridge" IGBT MTP (Ultrafast NPT IGBT), 80 A Thermal Response ( Z thJC ) 1 D = 0.50 0.1 0.20 0.10 0.05 0.02 0.01 τJ R2 R2 τC τ2 τ1 τ τ2 Ri (°C/W) τi (sec) 0.024 0.00008 0.549 0.000098 Ci= τi/Ri Ci i/Ri 0.01 0.001 1E-006 R1 R1 τJ τ1 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc SINGLE PULSE ( THERMAL RESPONSE) 1E-005 0.0001 0.001 0.01 t1 , Rectangular Pulse Duration (sec) Fig.
40MT120UHAPbF, 40MT120UHTAPbF "Half Bridge" IGBT MTP Vishay High Power Products (Ultrafast NPT IGBT), 80 A Driver L + - D.U.T. 0 VCC D + C - 1K 900 V D.U.T. Fig. CT.1 - Gate Charge Circuit (Turn-Off) Fig. CT.3 - S.C. SOA Circuit Diode clamp/ D.U.T. L L - + 80 V + - -5V D.U.T. + VCC D.U.T./ driver 1000 V Rg Rg Fig. CT.2 - RBSOA Circuit Document Number: 94507 Revision: 01-Mar-10 Fig. CT.4 - Switching Loss Circuit For technical questions, contact: indmodules@vishay.com www.vishay.
40MT120UHAPbF, 40MT120UHTAPbF Vishay High Power Products "Half Bridge" IGBT MTP (Ultrafast NPT IGBT), 80 A ORDERING INFORMATION TABLE Device code 40 MT 120 U H T A PbF 1 2 3 4 5 6 7 8 1 - Current rating (40 = 40 A) 2 - Essential part number 3 - Voltage code (120 = 1200 V) 4 - Speed/type (U = Ultrafast IGBT) 5 - Circuit configuration (H = Half bridge) 6 - Special option: None = No special option T = Thermistor 7 - A = Al2O3 DBC substrate 8 - PbF = Lead (Pb)-free CIRCU
Outline Dimensions Vishay Semiconductors MTP Ø 1.1 20.5 12 ± 0.5 2.5 4 Ø5 3.5 DIMENSIONS in millimeters 31.8 33 2 8 7 6 5 4 3 1 13 9 10 11 1.8 12 8.1 1.2 ± 0.1 7.2 ± 0.1 7.8 ± 0.1 R2.6 (x 3) 5.7 ± 0.1 11.35 ± 0.1 5.4 ± 0.1 11.35 ± 0.1 27.5 3 ± 0.1 45° 8.7 ± 0.1 R5.8 (x 2) 8.5 ± 0.1 6 ± 0.1 3 ± 0.1 39.5 ± 0.1 44.5 48.7 1.3 63.5 ± 0.
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