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5MT060WFAPbF Vishay High Power Products "Full-Bridge" IGBT MTP (Warp Speed IGBT), 50 A FEATURES • Generation 4 warp speed IGBT technology • HEXFRED® antiparallel diodes with ultrasoft reverse recovery RoHS COMPLIANT • Very low conduction and switching losses • Optional SMT thermistor • Al2O3 DBC • Very low stray inductance design for high speed operation • UL pending • Operating frequencies 8 to 60 kHz > 20 kHz hard switching, > 200 kHz resonant mode MTP • Totally lead (Pb)-free • Designed and qualifi
25MT060WFAPbF Vishay High Power Products "Full-Bridge" IGBT MTP (Warp Speed IGBT), 50 A ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise noted) PARAMETER SYMBOL Collector to emitter breakdown voltage V(BR)CES Temperature coefficient of breakdown voltage ΔV(BR)CES/ΔTJ Collector to emitter saturation voltage VCE(on) Gate threshold voltage VGE(th) Temperature coefficient of threshold voltage Transconductance ΔVGE(th)/ΔTJ gfe ICES (1) Zero gate voltage collector current Gate to emitter leakage
25MT060WFAPbF "Full-Bridge" IGBT MTP (Warp Speed IGBT), 50 A Vishay High Power Products THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Operating junction temperature range Storage temperature range TEST CONDITIONS MIN. TJ - 40 - 150 TStg - 40 - 125 - - 0.64 - - 0.9 - 0.06 - 5.5 - - 8 - - °C IGBT Junction to case Diode Case to sink per module Clearance TYP. MAX.
25MT060WFAPbF Vishay High Power Products "Full-Bridge" IGBT MTP (Warp Speed IGBT), 50 A thJC Thermal Response (ZthJC) 10 1 D = 0.50 0.20 0.10 0.1 0.05 0.02 0.01 0.01 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 t1, Rectangular Pulse Duration (sec) Fig. 4 - Maximum Transient Thermal Impedance, Junction to Case (Diode) 1.
25MT060WFAPbF "Full-Bridge" IGBT MTP (Warp Speed IGBT), 50 A Vishay High Power Products 2.0 140 VR = 200V TJ = 125°C TJ = 25°C EOFF 120 VCC = 480V 1.5 100 trr- (nC) Switching Losses (mJ) RG = 5.0Ω TJ = 25°C VGE = 15V 1.0 80 I F = 50A I F = 25A IF = 10A 60 EON 0.5 40 0.0 0 10 20 30 40 50 20 100 60 di f /dt - (A/μs) IC, Collector Current (A) Fig. 9 - Typical Switching Losses vs. Collector to Emitter Current Fig. 12 - Typical Reverse Recovery Time vs.
25MT060WFAPbF Vishay High Power Products "Full-Bridge" IGBT MTP (Warp Speed IGBT), 50 A 10000 di (rec) M/dt- (A /μs) VR = 200V TJ = 125°C TJ = 25°C I F = 50A 1000 I F = 25A I F = 10A A 100 100 1000 di f /dt - (A/μs) Fig. 15 - Typical dI(rec)M/dt vs.
Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product.
