Instruction Manual

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Document Number: 93700
6 Revision: 19-Sep-08
22RIA Series
Vishay High Power Products
Medium Power Thyristors
(Stud Version), 22 A
Fig. 7 - Forward Voltage Drop Characteristics
Fig. 8 - Thermal Impedance Z
thJC
Characteristics
Fig. 9 - Gate Characteristics
1
10
100
1000
0.511.522.53
T = 25°C
J
Instantaneous On-state Current (A)
Instantaneous On-state Voltage (V)
T = 125°C
J
22RIA Series
0.01
0.1
1
0.001 0.01 0.1 1 10
Square Wave Pulse Duration (s)
22RIA Series
thJC
Transient Thermal Impedance Z (K/W)
Steady State Value
R = 0.86 K/W
(DC Operation)
thJC
0.1
1
10
100
0.001 0.01 0.1 1 10 100
VGD
IGD
(b)
(a)
(1)
(2)
Instantaneous Gate Current (A)
Instantaneous Gate Voltage (V)
a) Recommended load line for
b) Recommended load line for
Rectangular gate pulse
tr<=1 µs, tp >= 6 µs
rated di/dt : 10V, 20ohms
<=30% rated di/dt : 10V, 65ohms
(1) PGM = 16W, tp = 4ms
(2) PGM = 30W, tp = 2ms
(3) PGM = 60W, tp = 1ms
(4) PGM = 60W, tp = 1ms
tr <=0.5 µs, tp >= 6 µs
(3)
(4)
Tj = -65 °C
Tj = 25 °C
Tj = 125 °C
22RIA Series Frequency Limited by PG(AV)