Owner manual
www.vishay.com For technical questions, contact: indmodules@vishay.com
Document Number: 94505
6 Revision: 01-Mar-10
20MT120UFP
Vishay High Power Products
"Full Bridge" IGBT MTP
(Ultrafast NPT IGBT), 40 A
Fig. 13 - Typical Energy Loss vs. I
C
T
J
= 125 °C; L = 1 mH; V
CC
= 600 V
R
g
= 5 Ω; V
GE
= 15 V
Fig. 14 - Typical Switching Time vs. I
C
T
J
= 125 °C; L = 1 mH; V
CC
= 600 V
R
g
= 5 Ω; V
GE
= 15 V
Fig. 15 - Typical Energy Loss vs. R
g
T
J
= 125 °C; L = 1 mH; V
CC
= 600 V
I
CE
= 6 A; V
GE
= 15 V
Fig. 16 - Typical Switching Time vs. R
g
T
J
= 150 °C; L = 1 mH; V
CC
= 600 V
I
CE
= 6 A; V
GE
= 15 V
Fig. 17 - Typical Diode I
rr
vs. I
F
T
J
= 150 °C
Fig. 18 - Typical Diode I
rr
vs. R
g
T
J
= 150 °C; I
F
= 5.0 A
0 1020304050
0
0.5
1
1.5
2
2.5
Eon
Eoff
I
C
(A)
Energy (mJ)
01020304050
1
10
100
1000
td (off)
td (on)
tr
tf
I
C
(A)
Switching time (ns)
0 1020304050
0.2
0.4
0.6
0.8
1
1.2
Eon
Eoff
Energy (mJ)
R
G
( Ω )
0 1020304050
1
10
100
1000
td (off)
td (on)
tr
tf
R
G
( Ω )
Switching time (ns)
0 5 10 15 20 25 30 35
I
F
(A)
0
10
20
30
40
I
RR
)A
(
R
G =
5.0
Ω
R
G =
10
Ω
R
G =
30
Ω
R
G =
50
Ω
0 10 20 30 40 50 60
R
G
(
Ω)
0
10
20
30
40
I
RR
)A(