Owner manual

Document Number: 94505 For technical questions, contact: [e-mail]
www.vishay.com
Revision: 01-Mar-10 3
20MT120UFP
"Full Bridge" IGBT MTP
(Ultrafast NPT IGBT), 40 A
Vishay High Power Products
DIODE SPECIFICATIONS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Diode forward voltage drop V
FM
I
C
= 20 A - 2.48 2.94
V
I
C
= 40 A - 3.28 3.90
I
C
= 20 A, T
J
= 125 °C - 2.44 2.84
I
C
= 40 A, T
J
= 125 °C - 3.45 4.14
I
C
= 20 A, T
J
= 150 °C - 2.21 2.93
Reverse recovery energy of the diode E
rec
V
GE
= 15 V, R
g
= 5 Ω, L = 200 μH
V
CC
= 600 V, I
C
= 20 A
T
J
= 125 °C
- 420 630 μJ
Diode reverse recovery time t
rr
- 98 150 ns
Peak reverse recovery current I
rr
-3350A
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Operating junction temperature range T
J
- 40 - 150
°C
Storage temperature range T
Stg
- 40 - 125
Junction to case
IGBT
R
thJC
- 0.35 0.52
°C/WDiode - 0.40 0.61
Case to sink per module R
thCS
Heatsink compound thermal conductivity = 1 W/mK - 0.06 -
Clearance External shortest distance in air between 2 terminals 5.5 - -
mm
Creepage
Shortest distance along external surface of the
insulating material between 2 terminals
8--
Mounting torque
A mounting compound is recommended and the
torque should be checked after 3 hours to allow for
the spread of the compound. Lubricated threads.
3 ± 10 % Nm
Weight 66 g