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0MT120UFP Vishay High Power Products "Full Bridge" IGBT MTP (Ultrafast NPT IGBT), 40 A FEATURES • Ultrafast Non Punch Through (NPT) technology • Positive VCE(on) temperature coefficient • 10 μs short circuit capability • HEXFRED® antiparallel diodes with ultrasoft reverse recovery • Low diode VF • Square RBSOA • Aluminum nitride DBC MTP • Very low stray inductance design for high speed operation • UL approved file E78996 • Speed 8 kHz to 60 kHz • Compliant to RoHS directive 2002/95/EC • Designed and qua
20MT120UFP Vishay High Power Products "Full Bridge" IGBT MTP (Ultrafast NPT IGBT), 40 A ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise noted) PARAMETER SYMBOL Collector to emitter breakdown voltage V(BR)CES Temperature coefficient of breakdown voltage Collector to emitter saturation voltage ΔV(BR)CES/ΔTJ VCE(on) Gate threshold voltage VGE(th) Temperature coefficient of threshold voltage Transconductance VGE(th)/ΔTJ gfe Zero gate voltage collector current ICES Gate to emitter leakage cu
20MT120UFP "Full Bridge" IGBT MTP Vishay High Power Products (Ultrafast NPT IGBT), 40 A DIODE SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Diode forward voltage drop VFM Reverse recovery energy of the diode Erec Diode reverse recovery time trr Peak reverse recovery current Irr TEST CONDITIONS MIN. TYP. MAX. UNITS IC = 20 A - 2.48 2.94 IC = 40 A - 3.28 3.90 IC = 20 A, TJ = 125 °C - 2.44 2.84 IC = 40 A, TJ = 125 °C - 3.45 4.
20MT120UFP Vishay High Power Products "Full Bridge" IGBT MTP (Ultrafast NPT IGBT), 40 A 50 1000 40 100 IC (A) IC (A) 30 20 10 10 0 1 0 20 40 60 80 100 120 140 160 10 100 1000 10 000 VCE (V) T C (°C) Fig. 1 - Maximum DC Collector Current vs. Case Temperature 250 Fig. 4 - Reverse Bias SOA TJ = 150 °C; VGE = 15 V 100 200 80 150 60 I C E ( A) Ptot ( W ) VGE = 18V 100 VGE VGE VGE VGE = 15V = 12V = 10V = 8.
20MT120UFP "Full Bridge" IGBT MTP Vishay High Power Products (Ultrafast NPT IGBT), 40 A 20 100 VGE VGE VGE VGE VGE 80 = 18V = 15V = 12V = 10V = 8.0V 40 ICE = 10A 16 ICE = 20A 14 ICE = 40A 12 VC E ( V) I CE (A) 60 18 10 8 6 20 4 2 0 0 0 2 4 6 8 10 5 15 20 V GE (V) Fig. 7 - Typical IGBT Output Characteristics TJ = 125 °C; tp = 80 μs Fig. 10 - Typical VCE vs.
20MT120UFP Vishay High Power Products "Full Bridge" IGBT MTP (Ultrafast NPT IGBT), 40 A 1000 2.5 td (off) tf 1.5 Switching time (ns) Energy (mJ) 2 Eon 1 Eoff 100 td (on) tr 10 0.5 0 1 0 10 20 30 40 0 50 10 20 30 50 Fig. 16 - Typical Switching Time vs. Rg TJ = 150 °C; L = 1 mH; VCC = 600 V ICE = 6 A; VGE = 15 V Fig. 13 - Typical Energy Loss vs. IC TJ = 125 °C; L = 1 mH; VCC = 600 V Rg = 5 Ω; VGE = 15 V 1000 40 tf RG = 5.
20MT120UFP "Full Bridge" IGBT MTP Vishay High Power Products (Ultrafast NPT IGBT), 40 A 40 10000 Cies 35 Capacitance (pF) IRR (A) 30 25 20 1000 Coes 100 Cres 15 10 10 0 200 400 600 800 0 1000 20 40 Fig. 19 - Typical Diode Irr vs. dIF/dt VCC = 400 V; VGE = 15 V; ICE = 5.0 A; TJ = 150 °C 80 100 Fig. 21 - Typical Capacitance vs. VCE VGE = 0 V; f = 1 MHz 3.0 16 14 5.0 Ω 2.5 10 Ω 600V 12 30A 2.0 10 20A 30Ω 1.5 50Ω VGE (V) Q R R (μ C ) 60 VCE (V) diF /dt (A/μs) 6 10A 1.
20MT120UFP Vishay High Power Products "Full Bridge" IGBT MTP (Ultrafast NPT IGBT), 40 A 1 Thermal Respons e ( Z thJC ) D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 0.01 τJ R1 R1 τJ τ1 τ1 R2 R2 τ2 R3 R3 τ3 τ2 τC τ τ3 Ci= τi/Ri Ci= i/Ri 0.001 1E-005 0.0001 τi (sec) 0.001017 0.033081 0.77744 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc SINGLE PULSE ( THERMAL RESPONSE ) 0.0001 1E-006 Ri (°C/W) 0.238 0.312 0.061 0.001 0.01 0.1 1 10 t1 , Rectangular Pulse Duration (sec) Fig.
20MT120UFP "Full Bridge" IGBT MTP Vishay High Power Products (Ultrafast NPT IGBT), 40 A 9, 10 4 5 3 6 15, 16 13, 14 2 7 1 8 11, 12 Fig.
Outline Dimensions Vishay Semiconductors MTP MOSFET/IGBT Full-Bridge DIMENSIONS in millimeters Ø5 Ø 1.1 4 20.5 12 ± 0.5 2.5 31.8 33 3 2 13 4 14 9 10 1 11 15 5 12 8 16 7 6 0.3 ± 0.1 7 6.6 ± 0.1 8 ± 0.1 45° 11.4 ± 0.1 11.3 ± 0.1 27.5 3 ± 0.1 5.3 ± 0.1 3 ± 0.1 7.4 ± 0.1 5.3 ± 0.1 Ø 5.2 x 3 8 ± 0.1 7 ± 0.1 R5.75 (x 2) 7.4 ± 0.1 4.9 ± 0.1 6.6 ± 0.1 39.5 44.5 48.7 0.6 x h1.2 1.3 63.5 ± 0.
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