User Manual

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Document Number: 93223
6 Revision: 29-Apr-10
20MT060KF
Vishay High Power Products
"Full Bridge" IGBT MTP
(Ultrafast NPT IGBT), 20 A
Fig. 15 - Typical Q
rr
Diode vs. dI
F
/dt
V
R
= 400 V; I
F
= 20 A
Fig. 16 - Maximum Thermal Impedance Z
thJC
Characteristics (IGBT)
Fig. 17 - Maximum Thermal Impedance Z
thJC
Characteristics (Diode)
Q
rr
(nC)
dI
F
/dt (A/μs)
100
93223_15
1000
0
1200
400
600
800
1000
200
T
J
= 25 °C
T
J
= 125 °C
0.001
0.01
0.1
1
10
0.00001
93223_16
0.0001 0.001 0.01 0.1 1
t
1
- Rectangular Pulse Duration (s)
Z
thJC
- Thermal Impedance
Junction to Case (°C/W)
10
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
DC
0.01
0.1
1
10
0.00001
93223_17
0.0001 0.001 0.01 0.1 1
t
1
- Rectangular Pulse Duration (s)
Z
thJC
- Thermal Impedance
Junction to Case (°C/W)
10
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
DC