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Document Number: 93223 For technical questions, contact: indmodules@vishay.com

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Revision: 29-Apr-10 1

"Full Bridge" IGBT MTP (Ultrafast NPT IGBT), 20 A

20MT060KF

Vishay High Power Products

FEATURES

• Generation 5 Non Punch Through (NPT)

technology

•Positive V

CE(on)

temperature coefficient

• 10 μs short circuit capability

•FRED Pt

hyperfast rectifier

•Low V

CE(on)

• Square RBSOA

• Very low conduction and switching losses

• Very low stray inductance design for high speed operation

• UL approved file E78996

• Speed 8 kHz to 60 kHz

• Compliant to RoHS directive 2002/95/EC

• Designed and qualified for industrial level

BENEFITS

• Optimized for welding, UPS and SMPS applications

• Low EMI, requires less snubbing

• Excellent current sharing in parallel operation

• Direct mounting to heatsink

• PCB solderable terminals

• Very low junction to case thermal resistance

PRODUCT SUMMARY

CES

600 V

C(DC)

20 A at T

= 97 °C

CE(on)

(typical)

at I

= 20 A, 25 °C

1.9 V

MTP

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS

Collector to emitter voltage V

CES

600 V

Continuous collector current I

= 25 °C 35

= 80 °C 24

Pulsed collector current I

Clamped inductive load current I

Diode continuous forward current I

= 95 °C 20

Peak diode forward current I

FSM

Gate to emitter voltage V

± 20

RMS isolation voltage V

ISOL

Any terminal to case, t = 1 minute 2500

Maximum power dissipation

per single IGBT

= 25 °C 114

= 80 °C 64

Summary of content (10 pages)

PAGE 1
20MT060KF Vishay High Power Products "Full Bridge" IGBT MTP (Ultrafast NPT IGBT), 20 A FEATURES • Generation 5 Non Punch Through (NPT) technology • Positive VCE(on) temperature coefficient • 10 μs short circuit capability • FRED Pt® hyperfast rectifier • Low VCE(on) • Square RBSOA • Very low conduction and switching losses MTP • Very low stray inductance design for high speed operation • UL approved file E78996 • Speed 8 kHz to 60 kHz • Compliant to RoHS directive 2002/95/EC • Designed and qualified for
PAGE 2
0MT060KF Vishay High Power Products "Full Bridge" IGBT MTP (Ultrafast NPT IGBT), 20 A ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise noted) PARAMETER SYMBOL Collector to emitter breakdown voltage V(BR)CES Temperature coefficient of breakdown voltage Collector to emitter saturation voltage VCE(on) Gate threshold voltage VGE(th) Temperature coefficient of threshold voltage Collector to emitter leaking current Diode forward voltage drop Gate to emitter leakage current ΔV(BR)CES/ΔTJ VGE(th
PAGE 3
20MT060KF "Full Bridge" IGBT MTP Vishay High Power Products (Ultrafast NPT IGBT), 20 A RECOVERY SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Diode reverse recovery time trr TEST CONDITIONS IF = 20 A dI/dt = 200 A/μs VR = 400 V MIN. TYP. MAX. UNITS - 85 106 ns - 4.5 6 A - 188 318 nC - 132 156 ns - 9.5 11 A - 626 842 nC MIN. TYP. MAX. UNITS TJ - 40 - 150 TStg - 40 - 125 - - 1.1 - - 2.1 - 0.06 - 5.
PAGE 4
20MT060KF Vishay High Power Products "Full Bridge" IGBT MTP (Ultrafast NPT IGBT), 20 A 1 100 90 TJ = 150 °C 80 TJ = 125 °C 0.1 70 IC (A) ICES (mA) TJ = 150 °C 60 TJ = 25 °C 50 40 TJ = 125 °C 0.01 30 0.001 20 TJ = 25 °C 10 0 0 1 2 3 4 5 6 VCE (V) 93223_03 0.0001 100 7 Fig. 3 - Typical IGBT Collector Current Characteristics VGE = 15 V 300 400 500 600 VCES (V) Fig. 6 - Typical IGBT Zero Gate Voltage Collector Current 160 5.0 140 TJ = 25 °C 120 4.
PAGE 5
20MT060KF "Full Bridge" IGBT MTP Vishay High Power Products (Ultrafast NPT IGBT), 20 A 0.8 1000 Switching Time (ns) 0.7 Energy (mJ) 0.6 0.5 Eoff 0.4 0.3 Eon 0.2 td(off) tf 100 td(on) tr 0.1 0 10 0 10 20 30 40 50 60 IC (A) 93223_09 0 10 20 Fig. 9 - Typical IGBT Energy Loss vs. IC, TJ = 125 °C VCC = 360 V, VGE = 15 V, L = 500 μH, Rg = 5 Ω 30 40 50 Rg (Ω) 93223_12 Fig. 12 - Typical IGBT Switching Time vs.
PAGE 6
20MT060KF Vishay High Power Products "Full Bridge" IGBT MTP (Ultrafast NPT IGBT), 20 A 1200 1000 TJ = 125 °C Qrr (nC) 800 600 400 TJ = 25 °C 200 0 100 1000 dIF/dt (A/μs) 93223_15 Fig. 15 - Typical Qrr Diode vs. dIF/dt VR = 400 V; IF = 20 A ZthJC - Thermal Impedance Junction to Case (°C/W) 10 1 0.1 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 DC 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 t1 - Rectangular Pulse Duration (s) 93223_16 Fig.
PAGE 7
20MT060KF "Full Bridge" IGBT MTP Vishay High Power Products (Ultrafast NPT IGBT), 20 A Driver L + - D.U.T. 0 VCC D + C - 1K 900 V D.U.T. Fig. C.T.1 - Gate Charge Circuit (Turn-Off) Fig. C.T.3 - S.C. SOA Circuit L Diode clamp/ D.U.T. L - + 80 V + - -5V D.U.T + VCC D.U.T./ driver 1000 V Rg Rg Fig. C.T.2 - RBSOA Circuit Fig. C.T.
PAGE 8
20MT060KF Vishay High Power Products "Full Bridge" IGBT MTP (Ultrafast NPT IGBT), 20 A CIRCUIT CONFIGURATION 9, 10 4 5 3 6 15, 16 13, 14 2 7 1 8 11, 12 LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com 8 www.vishay.com/doc?95245 For technical questions, contact: indmodules@vishay.
PAGE 9
Outline Dimensions Vishay Semiconductors MTP MOSFET/IGBT Full-Bridge DIMENSIONS in millimeters Ø5 Ø 1.1 4 20.5 12 ± 0.5 2.5 31.8 33 3 2 13 4 14 9 10 1 11 15 5 12 8 16 7 6 0.3 ± 0.1 7 6.6 ± 0.1 8 ± 0.1 45° 11.4 ± 0.1 11.3 ± 0.1 27.5 3 ± 0.1 5.3 ± 0.1 3 ± 0.1 7.4 ± 0.1 5.3 ± 0.1 Ø 5.2 x 3 8 ± 0.1 7 ± 0.1 R5.75 (x 2) 7.4 ± 0.1 4.9 ± 0.1 6.6 ± 0.1 39.5 44.5 48.7 0.6 x h1.2 1.3 63.5 ± 0.
PAGE 10
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