User Manual

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Document Number: 94379
6 Revision: 04-Nov-09
110RKI...PbF, 111RKI...PbF Series
Vishay High Power Products
Phase Control Thyristors
(Stud Version), 110 A
Fig. 9 - Gate Characteristics
ORDERING INFORMATION TABLE
0.1
1
10
100
0.001
94379_09
Instantaneous Gate Current (A)
Instantaneous Gate Voltage (V)
0.01 0.1 1 10 1000100
(1) P
GM
= 12 W, t
p
= 5 ms
(2) P
GM
= 30 W, t
p
= 2 ms
(3) P
GM
= 60 W, t
p
= 1 ms
(4) P
GM
= 200 W, t
p
= 300 μs
Rectangular gate pulse
(a) Recommended load line for
rated dI/dt: 20 V, 30 Ω,
t
r
≤ 0.5 μs, t
p
≥ 6 μs
(b) Recommended load line for
≤ 30 % rated dI/dt: 15 V, 40 Ω,
t
r
≤ 1 μs, t
p
≥ 6 μs
(b)
(a)
T
J
= 25 °C
T
J
= 140 °C
T
J
= 40 °C
V
GD
I
GD
(1) (2) (3) (4)
Frequency limited by P
G(AV)
Device code
51324
11 0 RKI 120 PbF
1 -I
T(AV)
rated average output current (rounded/10)
3
- Thyristor
4
- Voltage code x 10 = V
RRM
(see Voltage Ratings table)
5
-
None = Standard production
PbF = Lead (Pb)-free
2
-
0 = Eyelet terminals (gate and auxiliary cathode leads)
1 = Fast-on terminals (gate and auxiliary cathode leads)
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95003