User Manual

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Document Number: 94379
2 Revision: 04-Nov-09
110RKI...PbF, 111RKI...PbF Series
Vishay High Power Products
Phase Control Thyristors
(Stud Version), 110 A
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current
at case temperature
I
T(AV)
180° conduction, half sine wave
110 A
90 °C
Maximum RMS on-state current I
T(RMS)
DC at 83 °C case temperature 172
A
Maximum peak, one-cycle
non-repetitive surge current
I
TSM
t = 10 ms
No voltage
reapplied
Sinusoidal half wave,
initial T
J
= T
J
maximum
2080
t = 8.3 ms 2180
t = 10 ms
100 % V
RRM
reapplied
1750
t = 8.3 ms 1830
Maximum I
2
t for fusing I
2
t
t = 10 ms
No voltage
reapplied
21.7
kA
2
s
t = 8.3 ms 19.8
t = 10 ms
100 % V
RRM
reapplied
15.3
t = 8.3 ms 14.0
Maximum I
2
√t for fusing I
2
√t t = 0.1 ms to 10 ms, no voltage reapplied 217 kA
2
√s
Low level value of threshold voltage V
T(TO)1
(16.7 % x π x I
T(AV)
< I < π x I
T(AV)
), T
J
= T
J
maximum 0.82
V
High level value of threshold voltage V
T(TO)2
(I > π x I
T(AV)
), T
J
= T
J
maximum 1.02
Low level value of on-state slope resistance r
t1
(16.7 % x π x I
T(AV)
< I < π x I
T(AV)
), T
J
= T
J
maximum 2.16
mΩ
High level value of on-state slope resistance r
t2
(I > π x I
T(AV)
), T
J
= T
J
maximum 1.70
Maximum on-state voltage V
TM
I
pk
= 350 A, T
J
= T
J
maximum, t
p
= 10 ms sine pulse 1.57 V
Maximum holding current I
H
T
J
= 25 °C, anode supply 6 V resistive load
200
mA
Typical latching current I
L
400
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum non-repetitive rate of
rise of turned-on current
dI/dt
Gate drive 20 V, 20 Ω, t
r
≤ 1 μs
T
J
= T
J
maximum, anode voltage ≤ 80 % V
DRM
300 A/μs
Typical delay time t
d
Gate current 1 A, dI
g
/dt = 1 A/μs
V
d
= 0.67 % V
DRM
, T
J
= 25 °C
1
μs
Typical turn-off time t
q
I
TM
= 50 A, T
J
= T
J
maximum, dI/dt = - 5 A/μs
V
R
= 50 V, dV/dt = 20 V/μs, gate 0 V 25 Ω
110
BLOCKING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum critical rate of rise of
off-state voltage
dV/dt T
J
= T
J
maximum linear to 80 % rated V
DRM
500 V/μs
Maximum peak reverse and
off-state leakage current
I
RRM
,
I
DRM
T
J
= T
J
maximum rated V
DRM
/V
RRM
applied 20 mA