Datasheet

Electrical characteristics STM32F103xx
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5.3.7 Internal clock source characteristics
The parameters given in Tabl e 2 3 are derived from tests performed under ambient
temperature and V
DD
supply voltage conditions summarized in Tabl e 7.
High-speed internal (HSI) RC oscillator
LSI Low Speed Internal RC Oscillator
Table 23. HSI oscillator characteristics
(1)
1. V
DD
= 3.3 V, T
A
= −40 to 105 °C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
f
HSI
Frequency 8 MHz
ACC
HSI
Accuracy of HSI oscillator
T
A
= –40 to 105 °C ±1 ±3%
T
A
= –10 to 85 °C ±1 ±2.5 %
T
A
= 0 to 70 °C ±1 ±2.2 %
at T
A
= 25°C ±1 ±2%
t
su(HSI)
HSI oscillator start up time 1 2 µs
I
DD(HSI)
HSI oscillator power
consumption
80 100 µA
Table 24. LSI oscillator characteristics
(1)
1. V
DD
= 3 V, T
A
= −40 to 105 °C unless otherwise specified.
Symbol Parameter Conditions
Min
(2)
2. Value based on device characterization, not tested in production.
Typ Max Unit
f
LSI
Frequency 30 40 60 kHz
t
su(LSI)
LSI oscillator startup time 85 µs
I
DD(LSI)
LSI oscillator power
consumption
0.65 1.2 µA