Datasheet

5
Figure 2. Forward current vs. forward voltage Figure 3. Relative intensity vs. forward current
(AlInGaP)
Figure 4. Relative intensity vs. forward current
(InGaN)
Figure 5a. Maximum forward current vs. ambi-
ent temperature, derated based on T
J
max =
110°C (AlInGaP)
Figure 6. Dominant wavelength vs. forward
current – InGaN devices
Figure 7. Radiation pattern
0 40
FORWARD CURRENT – mA
0
0.4
RELATIVE INTENSITY
(NORMALIZED AT 50 mA)
HSMx-Axxxx g 3
80
0.8
0.2
1.0
20
0.6
1.2
6010 30 70
1.4
50
0 20
CURRENT – mA
460
480
540
DOMINANT WAVELENGTH – nm
HSMx-Axxxx g 6
35
500
470
510
10
490
520
25
InGaN GREEN
5 15 30
530
InGaN CYAN
InGaN BLUE
HSMx-Axxxx g 7
RELATIVE INTENSITY
1.0
0
ANGLE – DEGREES
0.8
0.6
0.2
0.4
-70 -50
-30 30 50 70 90-90 -10 10
0.1
0.3
0.5
0.7
0.9
0
80
0
20 60 80 120
MAXIMUM FORWARD CURRENT – mA
AMBIENT TEMPERATURE – C
40
40
60
30
300C/W
20
70
100
10
350C/W
470C/W
50
0
0
20 60 80 120
MAXIMUM FORWARD CURRENT – mA
AMBIENT TEMPERATURE – C
40
20
30
15
300C/W
10
35
100
5
350C/W
470C/W
25
Figure 5b. Maximum forward current vs. ambi-
ent temperature, derated based on T
J
max =
110°C (InGaN)
0 3
FORWARD VOLTAGE – V
0
20
70
80
FORWARD CURRENT – mA
10
50
40
60
1 2 4 5
HSMM/K/N
HSMZ/V/U
HSMC/J/L/A/E
30
0 20
FORWARD CURRENT – mA
0
0.4
RELATIVE LUMINOUS INTENSITY
(NORMALIZED AT 30 mA)
35
0.8
0.2
1.0
10
0.6
1.2
305 15
25