Datasheet

8
Figure 1. Relative intensity vs. wavelength.
Figure 2. Forward current vs. forward voltage.
Figure 3. Relative intensity vs. forward current.
Figure 4. Maximum forward current vs. ambient
temperature. Derated based on T
J
MAX = 110˚C,
Rθ
JA
= 500˚C/W.
Figure 5. Dominant wavelength vs. forward
current – InGaN devices.
0 3
FORWARD VOLTAGE – V
0
10
30
35
FORWARD CURRENT – mA
5
5
20
15
25
1 2 4
HSMC/J/L/A/E
HSMM/K/N
HSMH
HSMS/D/Y/G
HSMZ/V/U
HSMB
Figure 4b. Maximum Forward Current Vs. Solder
Point Temperature. Derated based on T
J
MAX =
110°C, Rθ
JP
= 180°C/W or 280°C/W.
0
5
10
15
20
25
30
35
0 20 40 60 80 100 120
TEMPERATURE (°C)
CURRENT - mA
HSMS/D/G/
Y/H/Z/V/U
HSME
HSMM/K/B/N
HSMC/J/L/A
0
5
10
15
20
25
30
35
0 20 40 60 80 100 120
TEMPERATURE (°C)
CURRENT - mA
HSMS/D/G/Y/H
HSMC/J/L/A
HSMZ/V/U
HSMB
HSMM/K/N
HSME
0 20
CURRENT – mA
460
480
540
DOMINANT WAVELENGTH – nm
HSMx-A100 fig 5
35
500
470
510
10
490
520
25
GREEN
5 15 30
530
CYAN
BLUE
WAVELENGTH – nm
HSMx-A100 fig 1
EMERALD GREEN
RELATIVE INTENSITY
1.0
0.8
0
380 480 580 680 730 780630530430
BLUE
CYAN
0.6
0.4
0.2
GREEN
YELLOW GREEN
AMBER
ORANGE
RED ORANGE
RED
0.1
0.3
0.5
0.7
0.9
WAVELENGTH – nm
HSMx-A100 fig 1b
RELATIVE INTENSITY
1.0
0.8
0
380 480 580 680 730 780630530430
GaN BLUE
GaP
EMERALD
GREEN
GaP ORANGE
GaP RED
0.6
0.4
0.2
GaP YELLOW
GaP
YELLOW
GREEN
0 20
DC FORWARD CURRENT – mA
0
0.4
1.8
RELATIVE LUMINOUS INTENSITY
(NORMALIZED AT 20 mA)
HSMx-A100 fig 3
35
0.8
0.2
1.0
10
0.6
1.2
25
AlInGaP
Gap
5 15 30
1.4
1.6
AlGaAs
GaN
InGaN