Datasheet

3
Electrical Characteristics at T
A
= 25°C
Symbol Description
Device
Min. Typ. Max. Units Test ConditionsHLMP-
I
V
Luminous Intensity 1320
1321
8.6
8.6
30
30
mcd I
F
= 10 mA
(Figure 3)
1420
1421
9.2
9.2
15
15
mcd I
F
= 10 mA
(Figure 8)
1520
1521
6.7
6.7
22
22
mcd I
F
= 10 mA
(Figure 3)
2q
1
/
2
Including Angle Between
Half Luminous Intensity
Points
All 45 Deg. I
F
= 10 mA
See Note 1
(Figures 6, 11, 16, 21)
l
PEAK
Peak Wavelength 132x 635 nm Measurement
at Peak (Figure 1)
142X
152X
583
565
Dl
1/2
Spectral Line Halfwidth 132x 40 nm
142X
152X
36
28
l
d
Dominant Wavelength 132x 626 nm See Note 2 (Figure 1)
142X
152X
585
569
t
s
Speed of Response 132x 90 ns
142X
152X
90
500
C Capacitance 132x 11 pF V
F
= 0; f = 1 MHz
142X
152X
15
18
Rq
J-PIN
Thermal Resistance All 290 °C/W Junction to
Cathode Lead
V
F
Forward Voltage 132x 1.9 2.4 V I
F
= 10 mA
142X
152X
2.0
2.1
2.4
2.7
V
R
Reverse Breakdown Voltage All 5.0 V I
R
= 100 µA
h
V
Luminous Ecacy 132x 145 lumens
watt
See Note 3
142X
152X
500
595
Notes:
1. q
1
/
2
is the o-axis angle at which the luminous intensity is half the axial luminous intensity.
2. The dominant wavelength, l
d
, is derived from the CIE chromaticity diagram and represents the single wavelength which denes the color of
the device.
3. Radiant intensity, I
e
, in watts/steradian, may be found from the equation I
e
= l
v
/h
v
, where l
v
is the luminous intensity in candelas and h
v
is the
luminous ecacy in lumens/watt.