Datasheet

7
Electrical Specications
Test conditions that are not specied can be anywhere within the recommended operating range.
All typical specications are at T
A
= +25°C, V
DD1
= V
DD2
= +5 V.
DC Specications
Parameter Symbol Min. Typ. Max. Units Test Conditions
Logic Low Input I
DD1L
6.0 10.0 mA V
I
= 0 V
Supply Current
[1]
Logic High Input I
DD1H
1.5 3.0 mA V
I
= V
DDI
Supply Current
Input Supply Current I
DD1
13.0 mA
Output Supply Current I
DD2
5.5 11.0 mA
Input Current I
I
-10 10 µA
Logic High Output V
OH
4.4 5.0 V I
O
= -20 µA, V
I
= V
IH
Voltage 4.0 4.8 I
O
= -4 mA, V
I
= V
IH
Logic Low Output V
OL
0 0.1 V I
O
= -20 µA, V
I
= V
IL
Voltage 0.5 1.0 I
O
= -4 mA, V
I
= V
IL
Switching Specications
Parameter Symbol Min. Typ. Max. Units Test Conditions
Propagation Delay Time t
PHL
20 40 ns C
L
= 15 pF
to Logic Low Output
[2]
CMOS Signal Levels
Propagation Delay Time t
PHL
20 40 ns C
L
= 15 pF
to Logic Low Output
[2]
CMOS Signal Levels
Propagation Delay Time t
PLH
23 40 ns C
L
= 15 pF
to Logic High Output CMOS Signal Levels
Pulse Width
[3]
PW 80 ns C
L
= 15 pF
CMOS Signal Levels
Data Rate
[3]
12.5 MBd C
L
= 15 pF
CMOS Signal Levels
Pulse Width Distortion
[4]
PWD 3 8 ns C
L
= 15 pF
|t
PHL
- t
PLH
| CMOS Signal Levels
Propagation Delay Skew
[5]
t
PSK
20 ns C
L
= 15 pF
Output Rise Time t
R
9 ns C
L
= 15 pF
(10 - 90%) CMOS Signal Levels
Output Fall Time t
F
8 ns C
L
= 15 pF
(90 - 10%) CMOS Signal Levels
Common Mode |CM
H
| 10 20 kV/µs V
I
= V
DD1
, V
O
>
Transient Immunity at 0.8 V
DD1
,
Logic High Output
[6]
V
CM
= 1000 V
Common Mode |CM
L
| 10 20 kV/µs V
I
= 0 V, V
O
> 0.8 V,
Transient Immunity at V
CM
= 1000 V
Logic Low Output
[6]
Input Dynamic Power C
PD1
60 pF
Dissipation Capacitance
[7]
Output Dynamic Power C
PD2
10 pF
Dissipation Capacitance
[7]