Datasheet

11
V
OL
– LOW LEVEL OUTPUT VOLTAGE – V
-60
0.2
T
A
– TEMPERATURE – C
100
0.5
HCPL-261A fig 8
0.6
-20
0.3
20 60-40 0 40 80
0.4
V
CC
= 5.5 V
V
E
= 2 V
I
F
= 3.0 mA
I
O
= 16 mA
I
O
= 12.8 mA
I
O
= 9.6 mA
I
O
= 6.4 mA
I
OL
– LOW LEVEL OUTPUT CURRENT – mA
-60
0
T
A
– TEMPERATURE – C
100
60
HCPL-261A fig 5
80
-20
20
20
V
CC
= 5 V
V
E
= 2 V
V
OL
= 0.6 V
I
F
= 3.5 mA
60-40 0 40 80
40
I
OH
– HIGH LEVEL OUTPUT CURRENT – µA
-60
0
T
A
– TEMPERATURE – C
100
10
HCPL-261A fig 4
15
-20
5
20
V
CC
= 5.5 V
V
O
= 5.5 V
V
E
= 2 V
V
F
= 0.8 V
60-40 0 40 80
Figure 9. Test circuit for t
PHL
and t
PLH
.
V
O
– OUTPUT VOLTAGE – V
0
0
I
F
– FORWARD INPUT CURRENT – mA
2.0
4.0
HCPL-261A fig 7
5.0
1.0
2.0
0.5 1.5
3.0
1.0
R
L
= 4 kW
R
L
= 350 Ω
R
L
= 1 kΩ
Figure 4. Typical high level output current vs.
temperature.
I
F
– INPUT FORWARD CURRENT – mA
1.0
0.01
V
F
– FORWARD VOLTAGE – V
1.5
10.0
HCPL-261A fig 6
100.0
1.2
0.1
1.41.1 1.3
1.0
T
A
= 85 C
T
A
= 40 C
T
A
= 25 C
I
F
+
–
V
F
Figure 6. Typical diode input forward current
characteristic.
Figure 5. Low level output current vs. tempera-
ture.
Figure 7. Typical output voltage vs. forward
input current.
Figure 8. Typical low level output voltage vs.
temperature.
HCPL-261A fig 9
OUTPUT V
MONITORING
NODE
O
1.5 V
t
PHL
t
PLH
I
F
INPUT
O
V
OUTPUT
I = 3.5 mA
F
I = 1.75 mA
F
+5 V
7
5
6
8
2
3
4
1
PULSE GEN.
Z = 50 Ω
t = t = 5 ns
O
f
I
F
L
R
R
M
CC
V
0.1 µF
BYPASS
*C
L
*C IS APPROXIMATELY 15 pF WHICH INCLUDES
PROBE AND STRAY WIRING CAPACITANCE.
L
GND
INPUT
MONITORING
NODE
r
HCPL-261A/261N
90% 90%
10%
10%
t
rise
t
fall
V
OH
V
OL
HCPL-261A fig 9b (new)