Datasheet

10
Electrical Specifications (DC)
Over recommended temperature (T
A
= 0°C to 70°C) unless otherwise specified. See note 13.
Parameter Symbol Device Min. Typ.* Max. Units Test Conditions Fig. Note
Current
Transfer Ratio
CTR HCPL-4502/3
HCPL-0452/3
HCNW4502/3
19
15
24
24
50 T
A
= 25°C V
O
= 0.4 V
V
O
= 0.5 V
I
F
= 16 mA,
V
CC
= 4.5 V
1, 2,
4
5
Logic Low
Output Voltage
V
OL
HCPL-4502/3
HCPL-0452/3
HCNW4502/3
0.1
0.1
0.4
0.5
T
A
= 25°C I
O
= 3.0 mA
I
O
= 2.4 mA
I
F
= 16 mA,
V
CC
= 4.5 V
Logic High
Output Current
I
OH
0.003 0.5 µA T
A
= 25°C V
O
= V
CC
= 5.5 V I
F
= 0 mA 7
0.01 1 T
A
= 25°C V
O
= V
CC
= 15 V
50 V
O
= V
CC
= 15 V
Logic Low
Supply Current
I
CCL
50 200 µA I
F
= 16 mA, V
O
= Open,
V
CC
= 15 V
10
Logic High
Supply Current
I
CCH
0.02 1 µA T
A
= 25°C I
F
= 16 mA,
V
O
= Open,
10
2 V
CC
= 15 V
Input Forward V
F
Voltage
8-Pin DIP
SO-8
1.5 1.7 V T
A
= 25°C I
F
= 16 mA 3
1.8
Widebody 1.45 1.68 1.85 T
A
= 25°C I
F
= 16 mA
1.35 1.95
Input Reverse
Breakdown
Voltage
BV
R
8-Pin DIP
SO-8
5 V I
R
= 10 µA
Widebody 3 I
R
= 100
µA
Temperature
Coefficient of
Forward Volt-
age
∆V
F
/
∆T
A
8-Pin DIP
SO-8
-1.6 mV/°C I
F
= 16 mA
Widebody -1.9
Input
Capacitance
C
IN
8-Pin DIP
SO-8
60 pF f = 1 MHz, V
F
= 0 V
Widebody 90
Transistor DC
Current Gain
h
FE
8-Pin DIP
SO-8
150 V
O
= 5 V, I
O
= 3 mA
130 V
O
= 0.4 V, I
B
= 20 µA
Widebody 180 V
O
= 0.4 V, I
B
= 20 µA
160 V
O
= 5 V, I
O
= 3 mA
*All typicals at T
A
= 25°C.