Datasheet

8
Electrical Specications
T
A
= 25°C unless otherwise specied.
Parameter Symbol Device Min. Typ. Max. Units Test Conditions Fig. Note
Transfer Gain K
3
HCNR200 0.85 1.00 1.15 5 nA < I
PD
< 50 µA, 2,3 1
0 V < V
PD
< 15 V
HCNR201 0.95 1.00 1.05 5 nA < I
PD
< 50 µA, 1,2
0 V < V
PD
< 15 V
HCNR201 0.93 1.00 1.07 ‑40°C < T
A
< 85°C, 1,2
5 nA < I
PD
< 50 µA,
0 V < V
PD
< 15 V
Temperature ∆K
3
/∆T
A
‑65 ppm/°C ‑40°C < T
A
< 85°C, 2,3
Coecient of 5 nA < I
PD
< 50 µA,
Transfer Gain 0 V < V
PD
< 15 V
DC NonLinearity NL
BF
HCNR200 0.01 0.25 % 5 nA < I
PD
< 50 µA, 4,5, 3
(Best Fit) 0 V < V
PD
< 15 V 6
HCNR201 0.01 0.05 5 nA < I
PD
< 50 µA, 2,3
0 V < V
PD
< 15 V
HCNR201 0.01 0.07 ‑40°C < T
A
< 85°C, 2,3
5 nA < I
PD
< 50 µA,
0 V < V
PD
< 15 V
DC Nonlinearity NL
EF
0.016 5 nA < I
PD
< 50 µA, 4
(Ends Fit) 0 V < V
PD
< 15 V
Input Photo‑ K
1
HCNR200 0.25 0.50 0.75 % I
F
= 10 mA, 7 2
diode Current 0 V < V
PD1
< 15 V
Transfer Ratio HCNR201 0.36 0.48 0.72
(I
PD1
/I
F
)
Temperature ∆K
1
/∆T
A
‑0.3 %/°C ‑40°C < T
A
< 85°C, 7
Coecient I
F
= 10 mA
of K
1
0 V < V
PD1
< 15 V
Photodiode I
LK
0.5 25 nA I
F
= 0 mA, 8
Leakage Current 0 V < V
PD
< 15 V
Photodiode BV
RPD
30 150 V I
R
= 100 µA
Reverse Break‑
down Voltage
Photodiode C
PD
22 pF V
PD
= 0 V
Capacitance
LED Forward V
F
1.3 1.6 1.85 V I
F
= 10 mA 9,
Voltage 10
1.2 1.6 1.95 I
F
= 10 mA,
‑40°C < T
A
< 85°C
LED Reverse BV
R
2.5 9 V I
F
= 100 µA
Breakdown
Voltage
Temperature ∆V
F
/∆T
A
‑1.7 mV/°C I
F
= 10 mA
Coecient of
Forward Voltage
LED Junction C
LED
80 pF f = 1 MHz,
Capacitance V
F
= 0 V