Datasheet

3
ATF-54143 Electrical Speci cations
T
A
= 25°C, RF parameters measured in a test circuit for a typical device
Symbol Parameter and Test Condition Units Min. Typ.
[2]
Max.
Vgs Operational Gate Voltage Vds = 3V, Ids = 60 mA V 0.4 0.59 0.75
Vth
Threshold Voltage Vds = 3V, Ids = 4 mA V 0.18 0.38 0.52
Idss
Saturated Drain Current Vds = 3V, Vgs = 0V μA — 1 5
Gm
Transconductance Vds = 3V, gm = ΔIdss/ΔVgs; mmho 230 410 560
ΔVgs = 0.75- 0.7 = 0.05V
Igss Gate Leakage Current Vgd = Vgs = -3V μA — — 200
NF Noise Figure
[1]
f = 2 GHz Vds = 3V, Ids = 60 mA dB — 0.5 0.9
f = 900 MHz Vds = 3V, Ids = 60 mA dB — 0.3 —
Ga Associated Gain
[1]
f = 2 GHz Vds = 3V, Ids = 60 mA dB 15 16.6 18.5
f = 900 MHz Vds = 3V, Ids = 60 mA dB — 23.4 —
OIP3 Output 3
rd
Order f = 2 GHz Vds = 3V, Ids = 60 mA dBm 33 36.2 —
Intercept Point
[1]
f = 900 MHz Vds = 3V, Ids = 60 mA dBm — 35.5 —
P1dB
1dB Compressed f = 2 GHz Vds = 3V, Ids = 60 mA dBm — 20.4 —
Output Power
[1]
f = 900 MHz Vds = 3V, Ids = 60 mA dBm — 18.4 —
Notes:
1. Measurements obtained using production test board described in Figure 5.
2. Typical values measured from a sample size of 450 parts from 9 wafers.
Input
50 Ohm
Transmission
Line Including
Gate Bias T
(0.3 dB loss)
Input
Matching Circuit
Γ_mag = 0.30
Γ_ang = 150°
(0.3 dB loss)
Output
Matching Circuit
Γ_mag = 0.035
Γ_ang = -71°
(0.4 dB loss)
DUT
50 Ohm
Transmission
Line Including
Drain Bias T
(0.3 dB loss)
Output
Figure 5. Block diagram of 2 GHz production test board used for Noise Figure, Associated Gain, P1dB, and OIP3 measurements. This circuit represents a
trade-o between an optimal noise match and associated impedance matching circuit losses. Circuit losses have been de-embedded from actual measure-
ments.