Datasheet

2
ATF-54143 Absolute Maximum Ratings
[1]
Absolute
Symbol Parameter Units Maximum
V
DS
Drain - Source Voltage
[2]
V 5
V
GS
Gate - Source Voltage
[2]
V -5 to 1
V
GD
Gate Drain Voltage
[2]
V -5 to 1
I
DS
Drain Current
[2]
mA 120
P
diss
Total Power Dissipation
[3]
mW 725
P
in max.
(ON mode) RF Input Power (Vds=3V, Ids=60mA) dBm 20
[5]
P
in max.
(OFF mode) RF Input Power (Vd=0, Ids=0A) dBm 20
I
GS
Gate Source Current mA 2
[5]
T
CH
Channel Temperature °C 150
T
STG
Storage Temperature °C -65 to 150
θ
jc
Thermal Resistance
[4]
°C/W 162
Notes:
1. Operation of this device in excess of any one of these parameters
may cause permanent damage.
2. Assumes DC quiescent conditions.
3. Source lead temperature is 25°C. Derate 6.2 mW/°C for T
L
> 33°C.
4. Thermal resistance measured using 150°C Liquid Crystal Measure-
ment method.
5. The device can handle +20 dBm RF Input Power provided I
GS
is
limited to 2 mA. I
GS
at P
1dB
drive level is bias circuit dependent.
See application section for additional information.
Product Consistency Distribution Charts
[6, 7]
V
DS
(V)
Figure 1. Typical I-V Curves.
(V
GS
= 0.1 V per step)
I
DS
(mA)
0.4V
0.5V
0.6V
0.7V
0.3V
02146537
120
100
80
60
40
20
0
OIP3 (dBm)
Figure 2. OIP3 @ 2 GHz, 3 V, 60 mA.
LSL = 33.0, Nominal = 36.575
30 3432 38 4036 42
160
120
80
40
0
Cpk = 0.77
Stdev = 1.41
-3 Std
GAIN (dB)
Figure 3. Gain @ 2 GHz, 3 V, 60 mA.
USL = 18.5, LSL = 15, Nominal = 16.6
14 1615 1817 19
200
160
120
80
40
0
Cpk = 1.35
Stdev = 0.4
-3 Std
+3 Std
NF (dB)
Figure 4. NF @ 2 GHz, 3 V, 60 mA.
USL = 0.9, Nominal = 0.49
0.25 0.650.45 0.85 1.05
160
120
80
40
0
Cpk = 1.67
Stdev = 0.073
+3 Std
Notes:
6. Distribution data sample size is 450 samples taken from 9 di erent wafers. Future wafers allocated to this product may have nominal values
anywhere between the upper and lower limits.
7. Measurements made on production test board. This circuit represents a trade-o between an optimal noise match and a realizeable match
based on production test equipment. Circuit losses have been de-embedded from actual measurements.