Datasheet

3
Table 2. Absolute Maximum Ratings (T
A
= 25°C)
Parameters ASMT-TBBM-Nxxxx ASMT-TGBM-Nxxxx
DC Forward Current
[1]
20 mA
Peak Forward Current
[2]
100 mA
Power Dissipation 72 mW
Reverse Voltage, V
R
@ 10 µA Not Recommended for Reverse Bias
Junction Temperature 110°C 125°C
Operating Temperature -40°C to +100°C
Storage Temperature -40°C to +100°C
Notes:
1. Derate Linearly as shown in Figure 6.
2. Duty Factor = 10%, Frequency = 1kHz
Table 3. Optical Characteristics (T
J
= 25°C)
Color Part Number
Dice
Technology
Peak Wavelength
λ
PEAK
(nm)
Dominant
Wavelength
[1]
λ
D
(nm)
Vertical View-
ing Angle 2θ
½
[2]
(Degrees)
Total Flux /
Luminous Intensity
Φ
V
(lm) / I
V
(cd)
Typ. Typ. Typ. Typ.
Blue ASMT-TBBM-Nxx02 InGaN 459.5 465.0 120 2.8
Green ASMT-TGBM-Nxx02 InGaN 516.0 522.0 120 2.8
Notes:
1. The dominant wavelength, λ
D
, is derived from the CIE Chromaticity diagram and represents the color of the device.
2. θ
½
is the o-axis angle where the luminous intensity is ½ the peak intensity.
Table 4. Electrical Characteristics (T
J
= 25°C)
Part Number
Forward Voltage V
F
(Volts)
@ I
F
= 20 mA
Thermal
Resistance
Rθ
JP
(°C/W)Min. Typ. Max.
ASMT-TBBM-Nxxx2 2.8 3.2 3.6 230
ASMT-TGBM-Nxxx2 2.9 3.3 4.0 230