Datasheet

3
Table 2. Absolute Maximum Ratings (T
A
= 25 °C)
Parameters ASMT-QWBE-Nxxxx
DC Forward Current
[1]
150 mA
Peak Forward Current
[2]
300 mA
Power Dissipation 513 mW
Reverse Voltage -4V
Junction Temperature 125 °C
Operating Temperature -40 °C to +110 °C
Storage Temperature -40 °C to +110 °C
Notes:
1. Derate Linearly as shown in Figure 6.
2. Duty Factor = 10%, Frequency = 1kHz
Table 3. Optical Characteristics (T
A
= 25 °C)
Color Part Number
Dice
Technology
Typical
Chromaticity
Coordinates
Viewing
Angle 2θ
½
[1]
(Degrees)
Luminous
Ecacy
η
V
[2]
(lm/W)
Luminous
Eciency
η
e
(lm/W)
Total Flux /
Luminous Intensity
Φ
V
(lm) / I
V
(cd)
x y Typ. Typ. Typ. Typ.
Cool White ASMT-QWBE-Nxxxx InGaN 0.33 0.33 120 305 40 2.75
Notes:
1. θ
½
is the o-axis angle where the luminous intensity is ½ the peak intensity.
2. Radiant intensity, Ie in watts / steradian, may be calculated from the equation Ie = I
V
/ θ
V
, where I
V
is the luminous intensity in candelas and η
V
is
the luminous ecacy in lumens / watt.
Table 4. Electrical Characteristics (T
A
= 25 °C)
Part Number
Forward Voltage VF (Volts) @ IF = 150 mA
Thermal Resistance Rθ
J-P
(°C/W)Typ. Max.
ASMT-QWBE-NFH0E 3.6 4.1 60
Figure 2. Relative Intensity Vs. Wavelength
Figure 3. Forward Current Vs. Forward Voltage
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
380 430 480 530 580 630 680 730 780
WAVELENGTH - nm
RELATIVE INTENSITY
0
50
100
150
200
250
300
350
0 1 2 3 4 5
FORWARD VOLTAGE - V
FORWARD CURRENT - mA