Datasheet

3
Part Number
Forward Voltage V
F
(Volts) @ I
F
= 150 mA
Reverse Voltage
V
R
@ 100 µA
Thermal Resistance
Rq
J-P
(°C/W)
Typ. Max. Min.
ASMT-QAB2-Fxxxx 2.70 3.2 5 60
ASMT-QHB2-Fxxxx 2.70 3.2 5 60
ASMT-QRB2-Fxxxx 3.10 3.5 5 60
Table 2. Absolute Maximum Ratings (T
A
= 25°C)
Parameters ASMT-QxB2-Fxxxx
DC Forward Current
[1]
150 mA
Peak Forward Current
[2]
200 mA
Power Dissipation 470 mW
Reverse Voltage 5 V
Junction Temperature 125°C
Operating Temperature -40°C to +110°C
Storage Temperature -40°C to +110°C
Notes:
1. Derate l inearly as shown in Figure 6.
2. Duty Factor = 10%, Frequency = 1kHz.
Table 3. Optical Characteristics (T
A
= 25°C)
Color Part Number
Dice
Technology
Dominant
Wavelength
l
D
[1]
(nm)
Viewing
Angle 2q
1
/
2
[2]
(Degrees)
Luminous
Ecacy h
V
[3]
(lm/W)
Luminous Intensity
/Total Flux
I
V
(mcd) / Φ
V
(lm)
Typ. Typ. Typ. Typ.
Amber ASMT-QAB2-Fxxxx AlInGaP 594.5 120 450 0.30
Red Orange ASMT-QHB2-Fxxxx AlInGaP 617.0 120 210 0.30
Red ASMT-QRB2-Fxxxx AlInGaP 624.0 120 170 0.30
Notes:
1. The dominant wavelength, l
D
, is derived from the CIE Chromaticity diagram and represents the color of the device.
2. q
1
/
2
is the o-axis angle where the luminous intensity is 1/2 the peak intensity.
3. Radiant intensity, Ie in watts/steradian, may be calculated from the equation Ie = I
V
/h
V
, where I
V
is the luminous intensity in candelas and h
V
is
the luminous ecacy in lumens/watt.
Table 4. Electrical Characteristics (T
A
= 25°C)