Datasheet

3
Table 2. Absolute Maximum Ratings (T
A
= 25 °C)
Parameters ASMT-QxBD-Axxxx
DC Forward Current
[1]
150 mA
Peak Forward Current
[2]
300 mA
Power Dissipation 450 mW
Reverse Voltage, V
R
@ 100 µA
5 V
Junction Temperature
125 °C
Operating Temperature
-40 °C to +120 °C
Storage Temperature
-40 °C to +120 °C
Notes:
1. Derate Linearly as shown in Figure 6.
2. Duty Factor = 10%, Frequency = 1 kHz
Table 3. Optical Characteristics (T
J
= 25 °C)
Color Part Number
Dice
Technology
Peak
Wavelength
λ
PEAK
(nm)
Dominant
Wavelength
λ
D
[1]
(nm)
Viewing Angle
2θ
½
[2]
(Degrees)
Luminous
Eciency η
e
(lm/W)
Total Flux /
Luminous
Intensity
Φ
V
(lm) / I
V
(cd)
Typ. Typ. Typ. Typ. Typ.
Amber ASMT-QABD-Axx0E AlInGaP 596.2 593.1 120 44 2.5
Red Orange ASMT-QHBD-Axx0E AlInGaP 624.1 616.1 120 47 2.5
Red ASMT-QRBD-Axx0E AlInGaP 629.7 621.1 120 44 2.5
Notes:
1. The dominant wavelength, λ
D
, is derived from the CIE Chromaticity diagram and represents the color of the device.
2. θ
½
is the o-axis angle where the luminous intensity is ½ the peak intensity.
Table 4. Electrical Characteristics (T
J
= 25°C)
Part Number
Forward Voltage V
F
(V) @ I
F
= 150 mA
Thermal Resistance
Rθ
J-P
(°C/W)Min. Typ. Max.
ASMT-QABD-AxxxE 2.05 2.30 2.95 60
ASMT-QHBD-AxxxE 2.05 2.50 2.95 60
ASMT-QRBD-AxxxE 2.05 2.50 2.95 60