Datasheet

6
DOMINANT WAVELENGTH – nm
100
450
FORWARD CURRENT – mA
400
510
520
200150
540
530
250 300
490
350
480
470
460
500
GREEN
BLUE
I
F
– MAXIMUM FORWARD CURRENT – mA
0
0
T
A
– AMBIENT TEMPERATURE – °C
90
300
350
2010 30
400
40 50 60
200
70 80
150
100
50
250
Rθ
JA
= 50 C/W
Rθ
JA
= 40 C/W
Rθ
JA
= 30 C/W
0
50
100
150
200
250
300
350
400
450
500
0.00 0.50 1.00 1.50 2.00 2.50 3.00 3.50 4.00
FORWARD VOLTAGE - V
FORWARD CURRENT - mA
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
380 430 480 530 580 630 680 730 780
WAVELENGTH - nm
RELATIVE INTENSITY
GREEN
BLUE
COOL WHITE
WARM WHITE
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0 5 0 100 150 200 250 300 350 400 450 500
MONO PULSE CURRENT - mA
RELATIVE LUMINOUS FLUX (φV) - lm
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
-90 -70 -50 -30 -10 10 30 50 70 90
OFF-AXIS ANGLE (°)
RELATIVE INTENSITY
GREEN
BLUE
COOL WHITE
WARM WHITE
Figure 7. Relative Intensity vs. Wavelength for InGaN
Figure 8. Forward Current vs. Forward Voltage for InGaN
Figure 9. Relative Luminous Flux vs Mono Pulse Current for InGaN Figure 10. Radiation Pattern for InGaN
Figure 11. Maximum Forward Current vs. Ambient Temperature for InGaN
Derated based on T
J
MAX = 110°C, Rq
JA
= 30°C/W, 40°C/W and 50°C/W
Figure 12. Dominant wavelength vs. forward current – InGaN devices