Datasheet

MARCH 2002 – REVISED JULY 2008
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP6NTP2C High Voltage Ringing SLIC Protector
Electrical Characteristics, 0 °C ≤ T
J
≤ 70 °C (Unless Otherwise Noted)
Thermal Characteristics
Parameter Test Conditions Min Typ Max Unit
I
D
Off-state current V
D
=V
DRM
, V
GK
=0
T
J
=25°C-5µA
-50 µA
V
(BO)
Ramp breakover
voltage
UL 497B, dv/dt ≤±100 V/µs, di/dt = ±10 A/µs,
V
GG
= -100 V, Maximum ramp value = ±10 A
T
J
=25°C-112V
V
(BO)
Impulse breakover
voltage
2/10 µs, I
TM
= -27 A, di/dt = -27 A/µs, R
S
=50Ω, V
GG
= -100 V,
(see Note 3)
-115 V
V
GK(BO)
Gate-cathode impulse
breakover voltage
2/10 µs, I
TM
= -27 A, di/dt = -27 A/µs, R
S
=50Ω, V
GG
= -100 V,
(see Note 3)
15 V
V
F
Forward voltage I
F
=5A, t
w
= 200 µs3V
V
FRM
Ramp peak forward
recovery voltage
UL 497B, dv/dt ≤±100 V/µs, di/dt = ±10 A/µs,
Maximum ramp value = ±10 A
T
J
=25°C5V
V
FRM
Impulse peak forward
recovery voltage
2/10 µs, I
TM
= -27 A, di/dt = -27 A/µs, R
S
=50Ω,
(see Note 3)
12 V
I
H
Holding current I
T
= -1 A, di/dt = 1A/ms, V
GG
= -100 V -150 mA
I
GKS
Gate reverse current V
GG
=V
GK
=V
GKRM
, V
KA
=0
T
J
= 25 °C-5µA
-50 µA
I
GT
Gate trigger current I
T
=-3A, t
p(g)
≥ 20 µs, V
GG
= -100 V
T
J
=25°C5mA
6mA
V
GT
Gate-cathode trigger
voltage
I
T
=-3A, t
p(g)
≥ 20 µs, V
GG
= -100 V 2.5 V
C
KA
Cathode-anode off-
state capacitance
f=1MHz, V
d
=1V, I
G
= 0, (see Note 4)
V
D
= -3 V 100 pF
V
D
=-48V 50 pF
NOTES: 3. GR-1089-CORE intra-building 2/10, 1.5 kV conditions with 20 MHz bandwidth. The diode forward recovery and the thyristor gate
impulse breakover (overshoot) are not strongly dependent of the SLIC supply voltage value (V
GG
).
4. These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The unmeasured
device terminals are a.c. connected to the guard terminal of the bridge.
Parameter Test Conditions Min Typ Max Unit
R
θJA
Junction to free air thermal resistance
T
A
= 70 °C, EIA/JESD51-3 PCB,
EIA/JESD51-2 environment, P
tot
=0.52W
160 °C/W