Product Specs

AP-02FP Blutooth LE Module Specification Ver0.4
April 20, 2020
8
Deep sleep
current, example
3, V
BAT
= 1.25 V
I
ds3
As Ids2 but with 8 kB RAM data
reten- tion.
300 nA
Standby Mode
current, V
BAT
=
1.25 V
I
stb
Digital blocks and memories are
not clocked and are powered at
a reduced voltage.
30
μA
Current
consumption
RX, V
BAT
= 3 V
I
VBAT
RX Mode, ON Semiconductor
propri- etary audio streaming
protocol at 7 kHz audio BW, 5.5
ms delay.
0.9 mA
Current
consumption
TX, V
BAT
= 3 V
I
VBAT
TX Mode, ON Semiconductor
propri- etary audio streaming
protocol at 7 kHz audio BW, 5.5
ms delay. Transmit pow- er: 0
dBm
0.9
mA
Deep sleep
current,
example 1,
V
BAT
= 3 V
I
ds1
Wake up form wake up pin.
25
nA
Deep sleep
current,
example 2,
V
BAT
= 3 V
I
ds2
Embedded 32 kHz oscillator
running
with interrupts from timer or
external pin.
40 nA
Deep sleep
current,
example 3,
V
BAT
= 3 V
I
ds3
As Ids2 but with 8 kB RAM data
reten- tion.
100
nA
Standby Mode
current, V
BAT
=
3 V
I
stb
Digital blocks and memories are
not clocked and are powered at
a reduced voltage.
17 μA