Datasheet

165
2586N–AVR–04/11
ATtiny25/45/85
Notes: 1. a = address high bits, b = address low bits, d = data in high bits, e = data in low bits, p = data out high bits, q = data out low
bits, x = don’t care, 1 = Lock Bit1, 2 = Lock Bit2, 3 = CKSEL0 Fuse, 4 = CKSEL1 Fuse, 5 = CKSEL2 Fuse, 6 = CKSEL3
Fuse, 7 = SUT0 Fuse, 8 = SUT1 Fuse, 9 = CKOUT Fuse, A = CKDIV8 Fuse, B = BODLEVEL0 Fuse, C = BODLEVEL1
Fuse, D = BODLEVEL2 Fuse, E = EESAVE Fuse, F = WDTON Fuse, G = SPIEN Fuse, H = DWEN Fuse, I = RSTDISBL
Fuse, J = SELFPRGEN Fuse
2. For page sizes less than 256 words, parts of the address (bbbb_bbbb) will be parts of the page address.
3. For page sizes less than 256 bytes, parts of the address (bbbb_bbbb) will be parts of the page address.
4. The EEPROM is written page-wise. But only the bytes that are loaded into the page are actually written to the EEPROM.
Page-wise EEPROM access is more efficient when multiple bytes are to be written to the same page. Note that auto-erase
of EEPROM is not available in High-voltage Serial Programming, only in SPI Programming.