Datasheet

16
AT89C5132
4173C–USB–07/04
Program/Code
Memory
The AT89C5132 implements 64K Bytes of on-chip program/code memory. Figure 10
shows the split of internal and external program/code memory spaces depending on the
product.
The Flash memory increases EPROM and ROM functionality by in-circuit electrical era-
sure and programming. The high voltage needed for programming or erasing Flash cells
is generated on-chip using the standard V
DD
voltage, made possible by the internal
charge pump. Thus, the AT89C5132 can be programmed using only one voltage and
allows in application software programming. Hardware programming mode is also avail-
able using common programming tools. See the application note ‘Programming
T89C51x and AT89C51x with Device Programmers’.
The AT89C5132 implements an additional 4K Bytes of on-chip boot Flash memory pro-
vided in Flash memory. This boot memory is delivered programmed with a standard
bootloader software allowing In-System Programming (ISP). It also contains some
Application Programming Interfaces (API), allowing In Application Programming (IAP)
by using user’s own bootloader.
Figure 10. Program/Code Memory Organization
Flash Memory
Architecture
As shown in Figure 11 the AT89C5132 Flash memory is composed of four spaces
detailed in the following paragraphs.
Figure 11. AT89C5132 Memory Architecture
4K Bytes
Boot Flash
FFFFh
F000h
0000h
64K Bytes
Code Flash
FFFFh
F000h
FFFFh
64K Bytes
Flash Memory
0000h
Hardware Security
User
4K Bytes
Flash Memory
FFFFh
F000h
Boo
t
Extra Row