Datasheet

44
9502A–AT42–07/08
AT42QT2160
10.3 DC Specifications
10.4 Timing Specifications
Vdd = 5.0V, Cs = 4.7nF, Rs = 1MΩ, Ta = recommended range, unless otherwise noted
Parameter Description Min Typ Max Units Notes
Iddr
Average supply current,
running (LP16ms)
476
955
1127
µA
Vdd = 1.8V
Vdd = 3.3V
Vdd = 5.0V
Idds
Average supply current,
sleeping (SLEEP)
<1.5
<2
<3
µA
Vdd = 1.8V
Vdd = 3.3V
Vdd = 5.0V
Vil Low input logic level 0.2Vdd V 1.8V <Vdd <5V
Vhl High input logic level 0.6Vdd V 1.8V <Vdd <5V
Vol Low output voltage 0.2 V
Voh High output voltage 4.2 V
Iil Input leakage current 1 µA
Ar Acquisition resolution 10 bits
Rrst
Internal RST
pull-up resistor
60 kΩ
Parameter Description Min Typ Max Units Notes
TBS Burst duration
40
80
120
160
µs
BL = 4 (4x4 = 16 actual pulses)
BL = 8 (8x4 = 32 actual pulses)
BL = 12 (12x4 = 48 actual
pulses)
BL = 16 (16x4 = 64 actual
pulses)
Fc Burst center frequency 400 kHz
Fm Burst modulation, percentage ±8 %
T
DW Dwell time 250 500 ns
T
PW Pulse width 1000 ns