User's Manual
Rev: 0.1 Date:
23.
Copyright © 2013 Aptos Technology Inc.
3 ELECTRICAL SPECIFICATION
Table 2. Electrical Specification of AMWZ5168-AL module VDD = 3.0V @+25℃
Typical DC Characteristics Notes
Deep Sleep Current 100nA
Sleep Current 0.70uA With active sleep timer
Radio Transmit Current 15mA CPU is doze, radio transmitting
Radio Receive Current 17.5mA CPU is doze, radio receiving
Centre Frequency accuracy +/-25ppm Additional +/-15ppm allowance for temperature and ageing
Typical RF Characteristics Notes
Transmit Power +2.77dBm Normal
Maximum Input signal +10dBm For 1% PER, measured as sensitivity
RSSI range -95 to -10 dBm
RF Port Impedance –uFL connector 50 ohm 2.4 – 2.5GHz
Rx Spurious Emissions -61dBm Measured conducted into 50 ohms
Tx Spurious Emissions -40dBm Measured conducted into 50 ohms
VSWR (max) 2:1 2.4 – 2.5GHz
Peripherals Notes
Master SPI Port 3 selects 250kHz – 16MHz
Slave SPI Port Yes 250kHz – 8MHz
UART 2 16550 compatible
Two-wire serial I/F (compatible with
SMbus & I2C)
Yes Up to 400KHz
5 x PWM (4 x timer, 1 x timer/counter) yes 16MHz clock
Programmable Sleep Timers 2 32kHz clock
Digital IO lines (multiplexed with
UARTs, timers and SPI selects)
20
Analogue-to-Digital converter 4 Channels 10-bit, up to 100ks/s
Programmable analogue comparators Yes Ultra low power mode for sleep
Internal Temperature Sensor and
Battery Monitor
Yes
3.1 MAXIMUM RATINGS
Parameter Min Max
Device Supply Voltage VDD -0.3V 3.6V
All Pins -0.3V VDD + 0.3V
Storage Temperature
-40℃ +150℃
3.2 OPERATING CONDITIONS
Supply Min Max
VDD 2.0V 3.6V
Ambient temperature range
-40℃ +85℃