Datasheet

SPANNUNGS–STROM–WANDLER–IC AM422
analog microelectronics
April 99
2/10
ELEKTRISCHE SPEZIFIKATIONEN
T
amb
= 25°C, V
CC
= 24V, V
REF
= 5V, I
REF
= 1mA (unless otherwise noted)
Parameter Symbol Conditions Min. Typ. Max. Unit
Voltage Range
V
CC
635V
Quiescent Current
I
CC
T
amb
= – 40...+85°C, I
REF
= 0mA 1.5 mA
Temperature Specifications
Operating
T
amb
–40 85 °C
Storage T
st
–55 125 °C
Junction
T
J
150 °C
Thermal Resistance
Θ
ja
DIL8 plastic package 110 °C/W
Θ
ja
SO8 plastic package 180 °C/W
Voltage Reference
Voltage V
REF
VSET not connected 4.75 5.00 5.25 V
V
REF
VSET
=
GND
,
V
CC
≥ 11V
9.5 10.0 10.5 V
Trim Range
V
R10
4.5
V
R10
V
Current I
REF
*010mA
V
REF
vs. Temperature d
V
REF
/d
TT
amb
= – 40...+85°C ±90 ±140 ppm/°C
Line Regulation dV
REF
/dVV
CC
= 6V...35V 30 80 ppm/V
dV
REF
/dV
V
CC
= 6V...35V,
I
REF
≈ 5mA
60 150 ppm/V
Load Regulation d
V
REF
/d
I
0.05 0.10 %/mA
d
V
REF
/d
I
I
REF
≈ 5mA
0.06 0.15 %/mA
Load Capacitance
C
L
1.9 2.2 5.0 µF
Set Stage
Internal Gain
G
IA
1
Input Voltage V
SET
I
SET
= 4mA, R
0
= 25Ω
2.6 V
Offset Voltage V
OS
±1 ±3mV
V
OS
vs. Temperature d
V
OS
/d
T
±5µV/°C
Input Bias Current I
B
820nA
I
B
vs. Temperature d
I
B
/d
T
615pA/°C
Input Stage
Internal Gain
G
IN
0.5
Input Voltage V
IN
01.15V
Offset Voltage V
OS
±0.5 ±2.5 mV
V
OS
vs. Temperature dV
OS
/dT
±1.6 ±5µV/°C
Input Bias Current I
B
820nA
I
B
vs. Temperature d
I
B
/d
T
718pA/°C