Datasheet

REV. C
REF02
–4–
2
4
5
6
2. INPUT VOLTAGE (V
IN
)
4. GROUND
5. TRIM
6. OUTPUT VOLTAGE (V
OUT
)
DIE SIZE 0.074 0.048 INCH, 3552 SQUARE MILS
(1.88 1.22 MM, 2.29 SQUARE MM)
Figure 1. Dice Characteristics (125
C
Tested Dice Available)
TYPICAL ELECTRICAL CHARACTERISTICS
REF02NT REF02N REF02GT REF02G
Parameter Symbol Conditions Typical Typical Typical Typical Unit
Temp. Voltage Output
2, 3
V
T
630 630 630 630 mV
Temp. Voltage Output
Temperature
Coefficient
2, 3
TCV
T
2.1 2.1 2.1 2.1 mV/C
Output Voltage
Temperature
Coefficient TCV
O
10 10 10 10 ppm/C
Load Regulation I
L
= 0 mA to 10 mA
I
L
= 0 mA to 8 mA,
NT, GT @ 125C 0.007 0.005 0.009 0.006 %/mA
Output Voltage
Noise e
n p-p
0.1 Hz to 10 Hz 10 10 10 10 mV p-p
Turn-On Settling To ± 0.1% of Final
Time t
ON
Value NT, GT
GT @ 125C 7.5 5.0 7.5 5.0 ms
Quiescent Current I
SY
No Load, NT,
GT @ 125C 1.4 1.0 1.4 1.0 mA
Load Current I
L
21 21 21 21 mA
Sink Current I
S
–0.5 –0.5 –0.5 –0.5 mA
Short-Circuit Current I
SC
V
O
= 0 30 3030 30mA
NOTES
1
For 25C specifications of REF02NT and REF02GT, see REF02N and REF02G respectively.
2
See AN18 for detailed REF02 thermometer applications information.
3
Limit circuit in or out of Pin 3 to 50 nA and capacitance on Pin 3 to 30 pF.
(@ V
IN
= 15 V, T
A
= 25C, unless otherwise noted.)
1
WAFER TEST LIMITS
*
REF02NT REF02N REF02GT REF02G
Parameter Symbol Conditions Limit Limit Limit Limit Unit
Output Voltage V
O
I
L
= 0 4.975 4.985 4.950 4.975 V min
5.025 5.015 5.050 5.025 V max
Output Adjustment
Range V
TRIM
R
P
= 10 k3.0 ± 3.0 % min
Line Regulation V
IN
= 8 V to 40 V 0.015 0.01 0.015 0.01 %/V max
*Electrical tests are performed at wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not guaranteed
for standard product dice. Consult factory to negotiate specifications based on dice lot qualification through sample lot assembly and testing.
(@ V
IN
= 15 V, T
A
= 25C for REF02N and REF02G devices, T
A
= 125C for REF02NT and REF02GT devices,
unless otherwise noted.)