Datasheet

REV. C
REF01
–4–
WAFER TEST LIMITS
REF01NT REF01N REF01GT REF01G
Parameter Symbol Conditions Limit Limit Limit Limit Unit
Output Voltage V
O
I
L
= 0 10.05 10.03 10.10 10.05 V max
9.95 9.97 9.90 9.95 V min
Output Adjustment
Range V
TRIM
R
P
= 10 kΩ±3.0 ±3.0 % min
Line Regulation V
IN
= 13 V to 33 V 0.015 0.01 0.015 0.01 %/V max
*Electrical tests are performed at wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not guaranteed
for standard product dice. Consult factory to negotiate specifications based on dice lot qualification through sample lot assembly and testing.
(@ V
IN
= 15 V, T
A
= 25C for REF01N and REF01G devices, T
A
= 125C for REF01NT and REF01GT devices,
unless otherwise noted.)*
TYPICAL ELECTRICAL CHARACTERISTICS
REF01NT REF01N REF01GT REF01G
Parameter Symbol Conditions Typical Typical Typical Typical Unit
Load Regulation I
L
= 0 mA to 10 mA
I
L
= 0 mA to 8 mA,
NT, GT @ 125°C 0.007 0.005 0.009 0.006 %/mA
Output Voltage
Noise e
n p-p
0.1 Hz to 10 Hz 20 20 20 20 µV p-p
Turn-On Settling To ±0.1% of Final
Time t
ON
Value NT, GT @
125°C 7.5 5.0 7.5 5.0 µs
Quiescent Current I
SY
No Load, NT,
GT @ 125°C 1.4 1.0 1.4 1.0 mA
Load Current I
L
21 21 21 21 mA
Sink Current I
S
–0.5 –0.5 –0.5 –0.5 mA
Short Circuit
Current I
SC
V
O
= 0 30 3030 30mA
Output Voltage
Temperature
Coefficient TCV
O
10 10 10 10 ppm/°C
*For 25°C specifications of REF01NT and REF01GT, see REF01N and REF01G, respectively.
(@ V
IN
= 15 V, T
A
= 25C, unless otherwise noted.)*